用作红外光探测器的原子层沉积 TiO2/TiN 纳米层压材料的性能评估

G. Scarel, O. Kokhan, V. D. Wheeler
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摘要

我们研究了功率 P 在 mW 范围内、周期 τ = 3.55 fs(波长 λ = 1064 nm,频率 ν = 0.28 PHz)的近红外(NIR)激光与光电探测器的相互作用。我们利用原子层沉积(ALD)技术在玻璃基板上沉积不同序列的 TiO2/TiN 纳米薄层,从而制造出光电探测器。为了评估光电探测器的性能,我们假定 Pτ 是近红外激光传递给它们的能量,这样我们就可以提取光电探测器在零偏置电压下的电感 L,并将 P 与光电探测器产生的光电流 ΔI 或光电电压 ΔV 明确联系起来。这种联系在文献中有所提及,但并不充分。我们进一步假设 Pλ = P λ/lact 是照射到光电探测器的有效功率,其大小为 lact。通过这一假设,我们可以确定光电探测器的电流响应度 (πI)、噪声等效功率 (NEP) 和探测度 (D)。为了确定 Pτ 和 Pλ 是否正确反映了光电探测器与光相互作用时所涉及的能量和功率,我们将光电探测器的 L、πI、NEP 和 D 与文献中报道的最先进(SOA)器件的相应参数进行了比较。比较结果表明,我们的光电探测器的 L、πI、NEP 和 D 均在 SOA 器件的范围内,从而验证了我们对 Pτ 和 Pλ 的假设。最后,我们的研究结果为如何改进 ALD TiO2/TiN 纳米薄层作为光电探测器中合适的活性材料提供了建议。
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Performance evaluation of atomic layer deposited TiO2/TiN nanolaminates used as infrared photodetectors
We study the interaction with photodetectors of near infrared (NIR) laser light with power P in the range of mW and period τ = 3.55 fs (wavelength λ = 1064 nm, frequency ν = 0.28 PHz). We fabricate the photodetectors by depositing different sequences of thin TiO2/TiN nano-laminates onto glass substrates using atomic layer deposition (ALD). To evaluate the photodetector's performance, we assume Pτ to be the energy transferred to them from NIR laser light, allowing us to extract the photodetector's inductance L at zero bias voltage, and to explicitly link P to the photocurrent ΔI, or photovoltage ΔV, generated by the photodetector. Such a link is observed in the literature, but not justified. We further assume Pλ = P λ/lact to be the effective power illuminating the photodetector with size lact. This assumption enables us to determine the photodetector's current responsivity (πI), noise equivalent power (NEP), and detectivity (D). To establish whether Pτ and Pλ correctly account for the energy and the power involved in the photodetector's interaction with light, we compare L, πI, NEP, and D of our photodetectors to the corresponding parameters of state-of-the-art (SOA) devices reported in the literature. The comparison indicates that the L, πI, NEP, and D of our photodetectors are in the range of SOA devices, thus validating our assumptions on Pτ and Pλ. Finally, our findings provide suggestions on how to improve thin ALD TiO2/TiN nano-laminates as suitable active materials in photodetectors.
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