Thermal stability and crystallization kinetic of Se-Te-Ag glassy alloys and thick films for electronic devices

The present work has examined the thermal features of glassy chacogenide materials Se0.75-xTe0.25Agx (x = 0, 2, 4, 6, 8, 10 at %). The thermal stability of these compositions has been assessed under non-isothermal conditions using Differential Scanning Calorimetry (DSC), which has been used to find the glass transition temperature (Tg), the initial crystallization temperature (Tin), the temperature corresponding to the top of the crystallization rate (Tp), and the melting temperature (Tm). In addition, the kinetic parameter Kr(T) was given as an additional sign of thermal stability. Among these compositions, it was discovered that Se0.71Te0.25Ag0.04 had the best glass-forming ability and glass-thermal stability. The average coordination numbers of the considered samples have been discussed in relation to these results. Additionally, we measured the sheet resistivity, ρ, whose thickness is equivalent to 1000 nm at heating rate 5 K/min, in this work to study the crystallization kinetics of thick films of Se0.75-xTe0.25Agx (x = 0, 2, 4, 6, 8, 10 at %) in the temperature range of 300 to 625 K. This range was sufficient to draw attention to two substantial areas in the resistivity versus temperature curve, and the derivation of resistivity as a function of temperature established that the films under study only had one crystallization region.