n+ 发射极区域的氢化磷失活机制及其对 n+pp+ 多晶硅太阳能电池缺陷钝化的影响

IF 0.9 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Ovonic Research Pub Date : 2024-01-01 DOI:10.15251/jor.2024.201.45
R. Ouldamer, D. Belfennache, D. Madi, R. Yekhlef, S. Zaiou, Mohamed A. Ali
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引用次数: 0

摘要

n+ 发射极区域的掺杂水平是控制 n+ pp+ 多晶硅太阳能电池性能的一个重要参数。此外,大多数多晶硅 n+ pp+ 太阳能电池制造商都会从磷发射极 n+ 侧进行氢化处理,以提高光电效率。虽然氢气可以钝化缺陷,但它会通过磷氢络合物的形成改变初始磷掺杂水平。因此,磷失活会对光伏效率产生有害影响。在这种情况下,本研究的主要目的是研究 n+ 发射极区域的磷失活及其对氢化 n+ pp+ 多晶硅太阳能电池缺陷钝化的影响。为此,利用电子回旋共振系统通过微波等离子体放电进行氢化。此外,氢在钝化多晶硅缺陷的同时,也会使磷失活。因此,我们选择将这些同时发生的作用分开。因此,我们对基于肖特基二极管的单晶硅进行了磷失活处理,同时在 n+ pp+ 多晶硅太阳能电池中进行了缺陷钝化处理。我们的研究结果表明,氢能有效地钝化了磷掺杂剂。这种效应在初始磷掺杂水平较低的肖特基二极管中更为明显,因为氢很容易在体中扩散。在 n+ pp+ 样品上测量的开路电压值(Voc)清楚地显示了这一行为。事实上,n+区磷浓度低的太阳能电池的电压为 319 mV,而掺杂水平高的太阳能电池的电压为 230 mV。此外,所有 n+ pp+ 多晶硅太阳能电池在高微波等离子体功率下都显示出 Voc 饱和。对出现这种情况的原因进行了详细解释和讨论。
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Phosphorus deactivation mechanisms by hydrogenation in the n+ emitter region and its effect on defects passivation in n+pp+ poly-silicon solar cells
Doping level of the n+ emitter region is an essential parameter that controls the performance of the n+ pp+ poly-silicon solar cells. Also, most poly-silicon n+ pp+ solar cell manufacturers apply hydrogenation from the phosphorus emitter n+ side to improve photovoltaic efficiency. Although hydrogen can passivate defects as well as it changes initial phosphorus doping level through phosphorus-hydrogen complex formation. Consequently, phosphorus deactivation can have a harmful effect on photovoltaic efficiency. In this context, the primary purpose of this work is to investigate the phosphorus deactivation in n+ emitter region and its effect on defects passivation of hydrogenated n+ pp+ poly-silicon solar cells. To do this, hydrogenation is performed by microwave plasma discharge involving an electron cyclotron resonance system. Besides, hydrogen passivates defects in poly-silicon, at the same time it deactivates phosphorus. For this reason, we have chosen to separate these simultaneous effects. So, we performed phosphorus deactivation on Schottky diodes-based mono-silicon, while defect passivation was operated in n+ pp+ poly-silicon solar cells. Our results reveal that hydrogen effectively deactivates phosphorus dopant. This effect is deeper in Schottky diodes with low initial phosphorus doping level where hydrogen diffuses easily in the bulk. This behavior is clearly revealed in open circuit-voltage values (Voc) measured on n+ pp+ samples. In fact, solar cells with low phosphorus concentration in n+ region revealed 319 mV compared to 230 mV for high doping level. Also, all n+ pp+ poly-silicon solar cells show a saturation of Voc at high microwave plasma power. Reasons for such case were explained and discussed in detail.
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.90
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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