R. Ouldamer, D. Belfennache, D. Madi, R. Yekhlef, S. Zaiou, Mohamed A. Ali
{"title":"n+ 发射极区域的氢化磷失活机制及其对 n+pp+ 多晶硅太阳能电池缺陷钝化的影响","authors":"R. Ouldamer, D. Belfennache, D. Madi, R. Yekhlef, S. Zaiou, Mohamed A. Ali","doi":"10.15251/jor.2024.201.45","DOIUrl":null,"url":null,"abstract":"Doping level of the n+ emitter region is an essential parameter that controls the performance of the n+ pp+ poly-silicon solar cells. Also, most poly-silicon n+ pp+ solar cell manufacturers apply hydrogenation from the phosphorus emitter n+ side to improve photovoltaic efficiency. Although hydrogen can passivate defects as well as it changes initial phosphorus doping level through phosphorus-hydrogen complex formation. Consequently, phosphorus deactivation can have a harmful effect on photovoltaic efficiency. In this context, the primary purpose of this work is to investigate the phosphorus deactivation in n+ emitter region and its effect on defects passivation of hydrogenated n+ pp+ poly-silicon solar cells. To do this, hydrogenation is performed by microwave plasma discharge involving an electron cyclotron resonance system. Besides, hydrogen passivates defects in poly-silicon, at the same time it deactivates phosphorus. For this reason, we have chosen to separate these simultaneous effects. So, we performed phosphorus deactivation on Schottky diodes-based mono-silicon, while defect passivation was operated in n+ pp+ poly-silicon solar cells. Our results reveal that hydrogen effectively deactivates phosphorus dopant. This effect is deeper in Schottky diodes with low initial phosphorus doping level where hydrogen diffuses easily in the bulk. This behavior is clearly revealed in open circuit-voltage values (Voc) measured on n+ pp+ samples. In fact, solar cells with low phosphorus concentration in n+ region revealed 319 mV compared to 230 mV for high doping level. Also, all n+ pp+ poly-silicon solar cells show a saturation of Voc at high microwave plasma power. Reasons for such case were explained and discussed in detail.","PeriodicalId":49156,"journal":{"name":"Journal of Ovonic Research","volume":null,"pages":null},"PeriodicalIF":0.9000,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Phosphorus deactivation mechanisms by hydrogenation in the n+ emitter region and its effect on defects passivation in n+pp+ poly-silicon solar cells\",\"authors\":\"R. Ouldamer, D. Belfennache, D. Madi, R. Yekhlef, S. Zaiou, Mohamed A. Ali\",\"doi\":\"10.15251/jor.2024.201.45\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Doping level of the n+ emitter region is an essential parameter that controls the performance of the n+ pp+ poly-silicon solar cells. Also, most poly-silicon n+ pp+ solar cell manufacturers apply hydrogenation from the phosphorus emitter n+ side to improve photovoltaic efficiency. Although hydrogen can passivate defects as well as it changes initial phosphorus doping level through phosphorus-hydrogen complex formation. Consequently, phosphorus deactivation can have a harmful effect on photovoltaic efficiency. In this context, the primary purpose of this work is to investigate the phosphorus deactivation in n+ emitter region and its effect on defects passivation of hydrogenated n+ pp+ poly-silicon solar cells. To do this, hydrogenation is performed by microwave plasma discharge involving an electron cyclotron resonance system. Besides, hydrogen passivates defects in poly-silicon, at the same time it deactivates phosphorus. For this reason, we have chosen to separate these simultaneous effects. So, we performed phosphorus deactivation on Schottky diodes-based mono-silicon, while defect passivation was operated in n+ pp+ poly-silicon solar cells. Our results reveal that hydrogen effectively deactivates phosphorus dopant. This effect is deeper in Schottky diodes with low initial phosphorus doping level where hydrogen diffuses easily in the bulk. This behavior is clearly revealed in open circuit-voltage values (Voc) measured on n+ pp+ samples. In fact, solar cells with low phosphorus concentration in n+ region revealed 319 mV compared to 230 mV for high doping level. Also, all n+ pp+ poly-silicon solar cells show a saturation of Voc at high microwave plasma power. Reasons for such case were explained and discussed in detail.\",\"PeriodicalId\":49156,\"journal\":{\"name\":\"Journal of Ovonic Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2024-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Ovonic Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/jor.2024.201.45\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/jor.2024.201.45","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Phosphorus deactivation mechanisms by hydrogenation in the n+ emitter region and its effect on defects passivation in n+pp+ poly-silicon solar cells
Doping level of the n+ emitter region is an essential parameter that controls the performance of the n+ pp+ poly-silicon solar cells. Also, most poly-silicon n+ pp+ solar cell manufacturers apply hydrogenation from the phosphorus emitter n+ side to improve photovoltaic efficiency. Although hydrogen can passivate defects as well as it changes initial phosphorus doping level through phosphorus-hydrogen complex formation. Consequently, phosphorus deactivation can have a harmful effect on photovoltaic efficiency. In this context, the primary purpose of this work is to investigate the phosphorus deactivation in n+ emitter region and its effect on defects passivation of hydrogenated n+ pp+ poly-silicon solar cells. To do this, hydrogenation is performed by microwave plasma discharge involving an electron cyclotron resonance system. Besides, hydrogen passivates defects in poly-silicon, at the same time it deactivates phosphorus. For this reason, we have chosen to separate these simultaneous effects. So, we performed phosphorus deactivation on Schottky diodes-based mono-silicon, while defect passivation was operated in n+ pp+ poly-silicon solar cells. Our results reveal that hydrogen effectively deactivates phosphorus dopant. This effect is deeper in Schottky diodes with low initial phosphorus doping level where hydrogen diffuses easily in the bulk. This behavior is clearly revealed in open circuit-voltage values (Voc) measured on n+ pp+ samples. In fact, solar cells with low phosphorus concentration in n+ region revealed 319 mV compared to 230 mV for high doping level. Also, all n+ pp+ poly-silicon solar cells show a saturation of Voc at high microwave plasma power. Reasons for such case were explained and discussed in detail.
期刊介绍:
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.