利用嵌入式跟踪缓冲器提高 MLC NVM 高速缓存的寿命和性能

IF 2.2 4区 计算机科学 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE ACM Transactions on Design Automation of Electronic Systems Pub Date : 2024-04-16 DOI:10.1145/3659102
S. Sivakumar, John Jose, Vijaykrishnan Narayanan
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引用次数: 0

摘要

现代应用需要大量的片上和片外存储器。由于 STT-RAM、PCM 和 ReRAM 等新兴非易失性存储器技术的理想特性,这些技术正逐渐成为片上和片外存储器的流行技术。与 SRAM 和 DRAM 等传统存储器技术相比,它们具有最小的漏电流和较高的封装密度。然而,非易失性存储器(NVM)的写入耐久性低、写入延迟高、写入能量大。非易失性单层单元(SLC)存储器可在每个存储单元中存储一位数据,而多层单元(MLC)可在每个存储单元中存储两位或更多位数据。虽然 MLC NVM 的封装密度大大高于 SLC,但其使用寿命和访问速度也是关键问题。在给定缓存大小的情况下,MLC 缓存的空间消耗是 SLC 缓存的 1.84 倍,漏电功率是 SLC 缓存的 2.62 倍。我们提出了跟踪缓冲器辅助非易失性内存高速缓存(TANC),这是一种利用未充分利用的嵌入式跟踪缓冲器(ETB)提高基于 MLC 的末级高速缓存寿命和性能的方法。与 SLC NVM LLC 相比,TANC 将 MLC LLC 的寿命提高了 4.36 倍,平均内存访问时间缩短了 4%,与基线 MLC LLC 相比,分别缩短了 6.41 倍和 11%。
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Enhancing Lifetime and Performance of MLC NVM Caches using Embedded Trace buffers

Large volumes of on-chip and off-chip memory are required by contemporary applications. Emerging non-volatile memory technologies including STT-RAM, PCM, and ReRAM are becoming popular for on-chip and off-chip memories as a result of their desirable properties. Compared to traditional memory technologies like SRAM and DRAM, they have minimal leakage current and high packing density. Non Volatile Memories (NVM), however, have a low write endurance, a high write latency, and high write energy. Non-volatile Single Level Cell (SLC) memories can store a single bit of data in each memory cell, whereas Multi Level Cells (MLC) can store two or more bits in each memory cell. Although MLC NVMs have substantially higher packing density than SLCs, their lifetime and access speed are key concerns. For a given cache size, MLC caches consume 1.84x less space and 2.62x less leakage power than SLC caches. We propose Trace buffer Assisted Non-volatile Memory Cache (TANC), an approach that increases the lifespan and performance of MLC-based last-level caches using the underutilised Embedded Trace Buffers (ETB). TANC improves the lifetime of MLC LLCs up to 4.36x, and decreases average memory access time by 4% compared to SLC NVM LLCs and by 6.41x and 11%, respectively, compared to baseline MLC LLCs.

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来源期刊
ACM Transactions on Design Automation of Electronic Systems
ACM Transactions on Design Automation of Electronic Systems 工程技术-计算机:软件工程
CiteScore
3.20
自引率
7.10%
发文量
105
审稿时长
3 months
期刊介绍: TODAES is a premier ACM journal in design and automation of electronic systems. It publishes innovative work documenting significant research and development advances on the specification, design, analysis, simulation, testing, and evaluation of electronic systems, emphasizing a computer science/engineering orientation. Both theoretical analysis and practical solutions are welcome.
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