氧化镓κ相中的畴界和反相界结构

IF 0.6 4区 材料科学 Q4 CRYSTALLOGRAPHY Crystallography Reports Pub Date : 2024-04-16 DOI:10.1134/S1063774523601302
O. F. Vyvenko, A. S. Bondarenko, E. V. Ubyivovk, S. V. Shapenkov, A. I. Pechnikov, V. I. Nikolaev, S. I. Stepanov
{"title":"氧化镓κ相中的畴界和反相界结构","authors":"O. F. Vyvenko,&nbsp;A. S. Bondarenko,&nbsp;E. V. Ubyivovk,&nbsp;S. V. Shapenkov,&nbsp;A. I. Pechnikov,&nbsp;V. I. Nikolaev,&nbsp;S. I. Stepanov","doi":"10.1134/S1063774523601302","DOIUrl":null,"url":null,"abstract":"<p>The results of an experimental study of the real structure of thin films of κ-phase gallium oxide are reported. It has been established by electron backscattering diffraction in a scanning electron microscope and by transmission electron microscopy that gallium oxide single microcrystals consist of three types of rotating domains of the orthorhombic symmetry, which are rotated relative to each other around the growth axis by an angle of 120°. Single-crystal domains are characterized by a high density of straight antiphase boundaries, which, when intersecting, form a significant fraction of the domain wall structure.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1","pages":"23 - 28"},"PeriodicalIF":0.6000,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide\",\"authors\":\"O. F. Vyvenko,&nbsp;A. S. Bondarenko,&nbsp;E. V. Ubyivovk,&nbsp;S. V. Shapenkov,&nbsp;A. I. Pechnikov,&nbsp;V. I. Nikolaev,&nbsp;S. I. Stepanov\",\"doi\":\"10.1134/S1063774523601302\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The results of an experimental study of the real structure of thin films of κ-phase gallium oxide are reported. It has been established by electron backscattering diffraction in a scanning electron microscope and by transmission electron microscopy that gallium oxide single microcrystals consist of three types of rotating domains of the orthorhombic symmetry, which are rotated relative to each other around the growth axis by an angle of 120°. Single-crystal domains are characterized by a high density of straight antiphase boundaries, which, when intersecting, form a significant fraction of the domain wall structure.</p>\",\"PeriodicalId\":527,\"journal\":{\"name\":\"Crystallography Reports\",\"volume\":\"69 1\",\"pages\":\"23 - 28\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystallography Reports\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063774523601302\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1063774523601302","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0

摘要

摘要 报告了对κ相氧化镓薄膜真实结构的实验研究结果。通过扫描电子显微镜中的电子反向散射衍射和透射电子显微镜,确定了氧化镓单微晶由三种类型的正交对称旋转畴组成,这些旋转畴围绕生长轴相对旋转 120°。单晶畴的特点是高密度的反相直线边界,当它们相交时,形成畴壁结构的重要部分。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide

The results of an experimental study of the real structure of thin films of κ-phase gallium oxide are reported. It has been established by electron backscattering diffraction in a scanning electron microscope and by transmission electron microscopy that gallium oxide single microcrystals consist of three types of rotating domains of the orthorhombic symmetry, which are rotated relative to each other around the growth axis by an angle of 120°. Single-crystal domains are characterized by a high density of straight antiphase boundaries, which, when intersecting, form a significant fraction of the domain wall structure.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
期刊最新文献
Transition State of Matter in the Fluctuation Model of Crystal Growth Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates Crystals of para-Quaterphenyl and Its Trimethylsilyl Derivative. I: Growth from Solutions, Structure, and Crystal Chemical Analysis by the Hirschfeld Surface Method Effect of Annealing of Ca3TaGa3Si2O14 Catangasite Crystals on Their Optical Activity Photopolymerization of the Langmuir‒Schaefer Films of Symmetrical Diynylic N-Arylcarbamate Molecules with Different Numbers of СН2 Groups in Spacers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1