胚芽能:GeX、GeX-、GeX+、GeX2、GeX2- 和 GeX2+ (X = F、Cl、Br 和 I)的光谱常数和键解离能

IF 2.1 4区 化学 Q3 CHEMISTRY, MULTIDISCIPLINARY Structural Chemistry Pub Date : 2024-04-20 DOI:10.1007/s11224-024-02324-2
Sudeshna Ghosh, Tapas Kumar Ghosh
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引用次数: 0

摘要

对锗单卤化物、锗二卤化物及其离子体系,即 GeX、GeX-、GeX+、GeX2、GeX2- 和 GeX2+(X = F、Cl、Br 和 I)的光谱常数、键解离能进行了 Ab initio 研究,对 F 原子和 Cl 原子使用了相关一致的三重zeta 基础集,对 Ge 原子、Br 原子和 I 原子使用了带有 RECPs 的类似三重zeta 基础集。使用 MP2、CCSD(T) 和 QCISD(T) 方法获得了所有卤化锗中性和离子体系的几何形状和频率。在 CCSD(T)//MP2、QCISD(T)//MP2、CCSD(T) 和 QCISD(T) 水平上获得了能量。据报告,单卤化物和二卤化物的电子亲和力(EA)和电离势(IP)与文献中的数据一致。大多数离子体系的各种解离渐近线的键解离能(BDEs)都是新的文献报告。利用 GeX2- 和 GeX2+ 离子的 BDE 以及相关中性体系的 EA 和 IP,计算了中性锗二卤化物 GeX2 的 BDE。结果表明,计算值与现有数据之间具有良好的一致性。据文献报道,GeX2 中较高卤素成员的 BDEs 是新的。这里还报告了中性 GeX2 二卤化物雾化和电离的形成焓。电离焓是首次在文献中报道,与其他 IV 族二卤化物的电离焓一致。所报告的分子性质可能有助于理解等离子体辅助制造基于 Ge 的现代微电子器件过程中所涉及的化学问题,并将作为未来的参考。
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Germylene energetics: spectroscopic constants and bond dissociation energies of GeX, GeX−, GeX+, GeX2, GeX2− and GeX2+ (X = F, Cl, Br and I)

Ab initio investigation of the spectroscopic constants, bond dissociation energies of germanium monohalides, germanium dihalides and their ionic systems, viz. GeX, GeX, GeX+, GeX2, GeX2 and GeX2+ (X = F, Cl, Br and I) have been carried out using correlation consistent triple-zeta basis sets for F and Cl and similar triple-zeta basis sets with RECPs for Ge, Br and I atoms. Geometry and frequency of all the neutral and ionic systems of germanium halides are obtained using MP2, CCSD(T) and QCISD(T) methods. The energetics are obtained at the CCSD(T)//MP2, QCISD(T)//MP2, CCSD(T) and QCISD(T) levels. Electron affinity (EA) and ionization potential (IP) of the monohalides and dihalides are reported to be consistent with the data available in literature. The bond dissociation energies (BDEs) to various dissociation asymptotes for most of the ionic systems are to be reported new in literature. The BDEs of the neutral germanium dihalides GeX2 are calculated by using the BDEs of GeX2 and GeX2+ ions and EA and IP of the associated neutral systems. A good agreement is found between the calculated values and the data wherever available. The BDEs of GeX2 for higher halogen member are reported to be new in literature. The enthalpies of formation for atomization and ionization of the neutral GeX2 dihalides are also reported here. The enthalpies of ionization are reported first time in literature and found consistent with other group IV dihalides. The reported molecular properties may be helpful to understand the chemistry involved in the plasma-assisted fabrication process of the Ge-based modern microelectronic devices, as well as will serve as a future reference.

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来源期刊
Structural Chemistry
Structural Chemistry 化学-化学综合
CiteScore
3.80
自引率
11.80%
发文量
227
审稿时长
3.7 months
期刊介绍: Structural Chemistry is an international forum for the publication of peer-reviewed original research papers that cover the condensed and gaseous states of matter and involve numerous techniques for the determination of structure and energetics, their results, and the conclusions derived from these studies. The journal overcomes the unnatural separation in the current literature among the areas of structure determination, energetics, and applications, as well as builds a bridge to other chemical disciplines. Ist comprehensive coverage encompasses broad discussion of results, observation of relationships among various properties, and the description and application of structure and energy information in all domains of chemistry. We welcome the broadest range of accounts of research in structural chemistry involving the discussion of methodologies and structures,experimental, theoretical, and computational, and their combinations. We encourage discussions of structural information collected for their chemicaland biological significance.
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