通过沉积后处理和氧化对单层 MoS2 进行改性以增强其光电特性

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY APL Materials Pub Date : 2024-04-22 DOI:10.1063/5.0189378
Jonathan Rommelfangen, Marco A. Gonzalez-Angulo, Devendra Pareek, Levent Gütay, Phillip J. Dale, Alex Redinger
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引用次数: 0

摘要

精确控制单层(ML)薄 MoS2 的光学和电学特性对于未来在功能器件中的应用至关重要。根据合成路线和沉积后退火协议的不同,材料中硫空位的数量也不同,这对二维层的特性有着深远的影响。在这里,我们发现富含硫空位的 ML MoS2 薄膜在室温下就会发生氧化,从而改变光致发光(PL)产率、MoS2-Al2O3 基底相互作用以及薄膜的结构完整性。我们使用 X 射线光电子能谱监测暴露于空气后 MoO3 的形成,以及可能的 MoS3-xOx,并量化薄膜中硫缺陷的数量。原子力显微镜测量使我们能够精确定位氧化区域,并开发出专用的低温加热程序来清除氧化物,从而获得不含 MoO3 的 MoS2 薄膜。原子力显微镜和开尔文探针力显微镜显示,MoS2-Al2O3 基底耦合发生了变化。MoS2 与基底耦合的降低,加上硫空位的优先氧化,导致聚光强度增加了七倍,三离子与中性激子之间的比例也发生了变化。我们的工作强调了氧化硫空位的重要性,并提供了测量和操纵 MoS2 中硫空位数量的有用方法。此外,通过硫空位和氧化作用改变 MoS2 与基底的相互作用,为调整二维薄膜的光电特性提供了一条优雅的途径。
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Modification of mono-layer MoS2 through post-deposition treatment and oxidation for enhanced optoelectronic properties
Precise control of the optical and electrical properties of mono-layer (ML) thin MoS2 is crucial for future applications in functional devices. Depending on the synthesis route and the post-deposition annealing protocols, the number of sulfur vacancies in the material is different, which has a profound impact on the properties of the 2D layer. Here, we show that the sulfur vacancy-rich ML MoS2 films oxidize already at room temperature, which changes the photoluminescence (PL) yield, the MoS2–Al2O3 substrate interaction, and the structural integrity of the films. We used x-ray photoelectron spectroscopy to monitor the formation of MoO3 and possibly MoS3−xOx after exposure to air and to quantify the number of sulfur defects in the films. Atomic force microscopy measurements allow us to pinpoint the exact regions of oxidation and develop a dedicated low temperature heating procedure to remove oxidized species, leading to MoO3-free MoS2 films. AFM and Kelvin probe force microscopy show that the MoS2–Al2O3 substrate coupling is changed. The reduction in the MoS2–substrate coupling, combined with a preferential oxidation of sulfur vacancies, leads to a sevenfold increase in the PL intensity, and the ratio between trions and neutral excitons is changed. Our work highlights the importance of oxidized sulfur vacancies and provides useful methods to measure and manipulate their number in MoS2. Furthermore, changes in the MoS2–substrate interaction via sulfur vacancies and oxidation offer an elegant pathway to tune the optoelectronic properties of the two-dimensional films.
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来源期刊
APL Materials
APL Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
9.60
自引率
3.30%
发文量
199
审稿时长
2 months
期刊介绍: APL Materials features original, experimental research on significant topical issues within the field of materials science. In order to highlight research at the forefront of materials science, emphasis is given to the quality and timeliness of the work. The journal considers theory or calculation when the work is particularly timely and relevant to applications. In addition to regular articles, the journal also publishes Special Topics, which report on cutting-edge areas in materials science, such as Perovskite Solar Cells, 2D Materials, and Beyond Lithium Ion Batteries.
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