用高纯度去离子水处理的单晶 (La0.3Sr0.7)(Al0.65Ta0.35)O3 (001) 表面的地形和形态变化

IF 1.6 4区 化学 Q4 CHEMISTRY, PHYSICAL Surface and Interface Analysis Pub Date : 2024-04-25 DOI:10.1002/sia.7313
Yoshinori Tokuda, Naoki Nishikawa, Takeshi Irimoto, Yutaro Katsuyama, Shunsuke Kobayashi, T. Tokunaga, Takahisa Yamamoto
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引用次数: 0

摘要

原子力显微镜和扫描透射电子显微镜(STEM)研究了用高纯度去离子水(DI)处理单晶(La0.3Sr0.7)(Al0.65Ta0.35)O3 时其(001)表面的拓扑和形态变化。室温下用去离子水处理的蚀刻主要以各向异性蚀刻模式进行,在表面形成了内表面为{001}的矩形蚀刻坑。随着 DI 处理温度的升高,主要的蚀刻模式从各向异性转变为各向同性,50°C 60 分钟 DI 处理的表面粗糙度最低。STEM 对表面原子结构的直接观察表明,在 50°C 60 分钟各向异性刻蚀后,刻蚀表面为 B 位端(001)表面,其中 B 位端原子层保持了晶体中存在的 B 位有序结构。这是因为 DI 处理无需对基底进行高温热处理,可抑制表面及其附近的元素扩散、升华和点缺陷的形成。
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Topographical and morphological changes of the single‐crystal (La0.3Sr0.7)(Al0.65Ta0.35)O3 (001) surface treated with high‐purity deionized water
The topological and morphological changes of the (001) surface of single‐crystal (La0.3Sr0.7)(Al0.65Ta0.35)O3 during treatment with high‐purity deionized water (DI) have been investigated by atomic force microscopy and scanning transmission electron microscopy (STEM). Etching by DI treatment at room temperature proceeded mainly in anisotropic etching mode, resulting in rectangular etch pits with {001} inner surfaces forming in the surface. The dominant etching mode changed from anisotropic to isotropic with increasing DI‐treatment temperature, and the lowest surface roughness occurred for DI treatment at 50°C for 60 min. Direct observation of the atomic structure of the surface by STEM showed that the etched surface was the B‐site‐terminated (001) surface after anisotropic etching at 50°C for 60 min, in which the B‐site‐terminated atomic layer was found to maintain the B‐site ordered structure existing in the crystal. This is because DI treatment, which does not require high‐temperature heat treatment of the substrate, suppresses element diffusion, sublimation, and formation of point defects on and in the vicinity of the surface.
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来源期刊
Surface and Interface Analysis
Surface and Interface Analysis 化学-物理化学
CiteScore
3.30
自引率
5.90%
发文量
130
审稿时长
4.4 months
期刊介绍: Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).
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