The Piezoresistive Performance of CuMnNi Alloy Thin-Film Pressure Sensors Prepared by Magnetron Sputtering

Effects of varying Mn and Ni concentrations on the structure and piezoresistive properties of CuMnNi films deposited by magnetron sputtering with a segmented target were investigated. An increase in the Ni content refines the CuNi film grains, inducing an increase in defects such as internal micropores and a decrease in film density. At the same time, the positive piezoresistive coefficient of the film changes to negative. When 17.5 at.% Ni was added, the negative piezoresistive coefficient of the CuNi film was −2.0 × 10−4 GPa−1. The doping of Ni has a weakening effect on the positive piezoresistive effect of the film. Adding Mn into Cu refines the film grains while increasing the film density. The surface roughness of the film decreases with the increase in Mn content. When the Mn content was 16.7 at.%, the piezoresistive coefficient reached the largest recorded value of 23.81 × 10−4 GPa−1, and the film exhibited excellent repeatability in multiple piezoresistive tests. After the CuMn film with 16.7 at.% Mn was annealed at 400 °C for 2 h, the film grains grew slightly and the film residual stress decreased. The optimization of the film structure can reduce the scattering of electrons during transportation. The piezoresistive coefficient of the film was further improved to 35.78 × 10−4 GPa−1.