使用低全球升温潜能值碳氟化合物前体(C6F6)对二氧化硅进行等离子体原子层蚀刻

Inho Seong, Ye-bin You, Youngseok Lee, M. Choi, Dain Sung, Geunyoung Yeom, Shinjae You
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摘要

随着全球变暖问题的重要性逐年增加,减少半导体制造过程中的温室气体排放引起了工业界和学术界的极大兴趣。在各种策略中,全世界都在积极寻找全球变暖潜能值低的蚀刻前驱体,以减少全球变暖潜能值高的传统前驱体的使用。在本文中,我们探讨了在二氧化硅的等离子体原子层蚀刻(ALE)中使用 C6F6 这一有望替代广泛使用的全氟化碳前驱体 C4F8 的候选物质。原位椭偏仪结果表明,C4F8 和 C6F6 在各自特定的原子层蚀刻窗口中均可获得可接受的原子层蚀刻特性,而 C6F6 则显示出更优越的原子层蚀刻性能。随后,根据等离子体的自由基密度、电子密度和等离子体电位诊断,对不同前驱体的 ALE 性能进行了研究,结果表明,不同前驱体自由基组成的差异会显著影响所产生的 ALE 趋势,而且 C6F6 的优异 ALE 性能可能源于其显著的聚合物特性。我们希望本研究结果有助于在蚀刻过程中更广泛地采用全球升温潜能值较低的前驱体。
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Plasma atomic layer etching of SiO2 with a low global warming potential fluorocarbon precursor (C6F6)
Reducing greenhouse gas emissions from semiconductor manufacturing has been attracting enormous interest in both industry and academia as global warming issues have increased in significance year by year. Among various strategies, the search for etch precursors that have low global warming potential is actively underway worldwide to reduce the use of conventional precursors with high global warming potential. In this paper, we explore the use of C6F6, a promising candidate to replace the widely utilized perfluorocarbon precursor C4F8, for plasma atomic layer etching (ALE) of SiO2. In situ ellipsometry results indicated that acceptable ALE characteristics were obtained with C4F8 and C6F6 each in their own specific ALE window, while C6F6 showed superior ALE performance. Investigation into the ALE performance with different precursors was then conducted based on plasma diagnostics for radical density, electron density, and plasma potential, and the results of which showed that the difference in the radical composition between precursors significantly affected the resulting ALE trends and also that the excellent ALE performance with C6F6 might originate from its significant polymeric characteristics. We expect the present findings to contribute to the wider adoption of low global warming potential precursors in the etching process.
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