基于 InGaN 和硅沟道叠层氧化物双栅极场效应晶体管的氨气传感器对比模拟研究

IF 1.5 Q3 INSTRUMENTS & INSTRUMENTATION Sensing and Imaging Pub Date : 2024-04-16 DOI:10.1007/s11220-024-00469-2
Divya Babbar, Neha Garg, S. Kabra
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Comparative Simulation Study of InGaN and Silicon Channel Stack Oxide Twin Gate Field Effect Transistor Based Ammonia Gas Sensor
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来源期刊
Sensing and Imaging
Sensing and Imaging INSTRUMENTS & INSTRUMENTATION-
CiteScore
5.00
自引率
0.00%
发文量
31
期刊介绍: Sensing and Imaging: An International Journal publishes peer-reviewed theoretical and experimental papers in print and online covering sensing and imaging techniques, systems, networks, and applications in engineering, science and medicine. The journal scope is broad and multidisciplinary, covering subsurface and surface sensing, and other sensing areas. Subsurface and surface sensing involves detection, identification and classification of objects, structures and matter, respectively, under and at surfaces.
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