Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy

β -Ga2O3 is actively touted as the next ultrawide bandgap material for power electronics. To fully utilize its high intrinsic critical electric field, development of high-quality robust large-barrier height junctions is essential. To this end, various high-work function metals, metal oxides, and hole-conducting oxides have been deposited on Ga2O3, primarily formed by sputter deposition. Unfortunately, reports to date indicate that measured barrier heights often deviate from the Schottky–Mott model as well as x-ray photoelectron spectroscopy (XPS) extractions of conduction band offsets, suggesting significant densities of electrically active defects at these junctions. We report Schottky diodes made from noble metal oxides, IrO2 and RuO2, deposited by ozone molecular beam epitaxy (ozone MBE) with barrier heights near 1.8 eV. These barriers show close agreement across extraction methods and robust to high surface electric fields upward of 6 MV/cm and 60 A/cm2 reverse current without degradation.