Sylvester Amoah, H. Stanchu, G. Abernathy, Serhii Kryvyi, F. D. de Oliveira, Yuriy I. Mazur, Shangda Li, Shang Liu, Jifeng Liu, Wei Du, Baohua Li, Gregory J. Salamo, Shui-Qing Yu
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引用次数: 0
摘要
离子注入在互补金属-氧化物-半导体工艺中得到广泛应用,这促使我们研究离子注入在快速出现的第四组 Ge1-xSnx 材料中的掺杂控制作用。我们测试了 As 和 B 植入以及随后的快速热退火(RTA)对 Ge1-xSnx 晶格损伤形成和愈合的影响。离子植入在 30、40 和 150 keV 下以不同剂量进行。使用二次离子质谱法确认了植入曲线。X 射线衍射结合拉曼光谱和光致发光光谱显示,随着植入剂量和能量的增加,晶体受到了明显的损坏。对于锡含量小于 11% 的 Ge1-xSnx 样品,在 300 °C 下进行 RTA 处理后证实了明显的损伤恢复,在 400 °C 下损伤恢复程度更大。离子注入后,制造出了一个 GeSn NP 二极管。该器件具有整流电流-电压特性,在 77 K 时的最大响应率和检测率分别为 1.29 × 10-3 A/W 和 3.0 × 106 cm (Hz)1/2/W。
Effects of ion implantation with arsenic and boron in germanium-tin layers
Ion implantation is widely used in the complementary metal–oxide–semiconductor process, which stimulates to study its role for doping control in rapidly emerging group IV Ge1−xSnx materials. We tested the impact of As and B implantation and of subsequent rapid thermal annealing (RTA) on the damage formation and healing of the Ge1−xSnx lattice. Ion implantation was done at 30, 40, and 150 keV and with various doses. The implantation profiles were confirmed using secondary ion mass spectrometry. X-ray diffraction in combination with Raman and photoluminescence spectroscopies indicated notable crystal damage with the increase of the implantation dose and energy. Significant damage recovery was confirmed after RTA treatment at 300 °C and to a larger extent at 400 °C for a Ge1−xSnx sample with Sn content less than 11%. A GeSn NP diode was fabricated after ion implantation. The device showed rectifying current-voltage characteristics with maximum responsivity and detectivity of 1.29 × 10−3 A/W and 3.0 × 106 cm (Hz)1/2/W at 77 K, respectively.