PbS 量子点薄膜干法蚀刻

Nicolas Le Brun, Gilles Cunge, Pascal Gouraud, C. Petit-Etienne, Linda Parmigiani, Stéphane Allegret-Maret, Denis Guiheux, Jonathan S. Steckel
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引用次数: 0

摘要

许多日常消费品都包含传感器和图像传感器(智能手机、汽车、自动化工具等)。人们越来越需要增强工业产品的能力,以便更有效地探测环境,例如在困难的条件下(烟雾、黑暗等)。一种解决方案是扩展图像传感器的功能,以探测近红外和短波红外(SWIR)区域的光线。由于硅在红外尤其是 SWIR 区域的吸收特性较弱,因此制造商正在研究使用新材料来制造这些传感器。为此,由 PbS 纳米粒子组装而成的胶体量子点 (QD) 薄膜已成为很有前途的材料。它们具有可调节的带隙、良好的吸收特性和生产的可扩展性。然而,通过等离子体蚀刻这种新材料来对光电二极管的有源部分进行图案化却面临着挑战。必须选择蚀刻化学方法,以便在不改变 PbS QD 光电二极管未蚀刻活性部分的情况下挥发 Pb 和 S,而且蚀刻轮廓应是各向异性的。在这项研究中,我们筛选了不同化学成分(H2、Cl2、HBr 和 N2)下的几种等离子体操作条件(功率、压力和温度)。为了了解蚀刻机制和蚀刻曲线,我们采用了 ToF-SIMS 和 TEM/ 能量色散 X 射线。我们的研究结果表明,基于卤素的等离子体会通过 Cl 或 Br 在薄膜深处的扩散导致 QD 材料劣化。虽然 H2 等离子体能有效地蚀刻 PbS QD 薄膜,但由于分离 PbS QD 的碳化配位体被去除,它们会导致高粗糙度。配体蚀刻后,QD 会发生凝聚,从而导致显著的粗糙度。然而,在 H2 中加入 N2 可以通过在表面形成扩散屏障来防止这种现象,从而获得良好的蚀刻特性。
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PbS quantum dot thin film dry etching
Many consumer products used daily contain sensors and image sensors (smartphones, cars, automated tools, etc.). There is a growing demand to enhance the capabilities of industrial products to probe their environment more efficiently, i.e., under difficult conditions (smoke, darkness, etc.). One solution is to extend the capabilities of image sensors to detect light toward the near-infrared and short-wave infrared (SWIR) regions. Because silicon has weak absorption properties in the infrared, especially in the SWIR region, manufacturers are investigating the use of new materials to build these sensors. To this end, colloidal quantum dot (QD) thin films made from the assembly of PbS nanoparticles have emerged as promising materials. They offer tunable bandgaps, favorable absorption properties, and scalability in production. However, patterning the active parts of photodiodes by plasma etching of this new material presents challenges. The etching chemistry must be selected to volatilize Pb and S without modifying the unetched active part of the PbS QD photodiode, and the etching profile should be anisotropic. In this study, we have screened several plasma operating conditions (power, pressure, and temperature) in various chemistries (H2, Cl2, HBr, and N2). To understand the etch mechanisms and profiles, ToF-SIMS and TEM/energy dispersive x-ray were employed. Our findings reveal that halogen-based plasmas cause QD material deterioration through Cl or Br diffusion deep in the film. While H2 plasmas are efficient to etch PbS QD films, they result in high roughness due to the removal of the carbonated ligands that separate PbS QDs. This ligand etching is followed by QD coalescence leading to significant roughness. However, the addition of N2 to H2 can prevent this phenomenon by forming a diffusion barrier at the surface, resulting in favorable etching characteristics.
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