Atefeh Fathzadeh, Philippe Bezard, Maxime Darnon, Inge Manders, T. Conard, I. Hoflijk, Frederic Lazzarino, S. de Gendt
{"title":"瞬态辅助等离子体蚀刻(TAPE):概念、机制和前景","authors":"Atefeh Fathzadeh, Philippe Bezard, Maxime Darnon, Inge Manders, T. Conard, I. Hoflijk, Frederic Lazzarino, S. de Gendt","doi":"10.1116/6.0003380","DOIUrl":null,"url":null,"abstract":"Atomic layer etching (ALE) schemes are often deemed economically unviable due to their slow pace and are not suited for every material/hard-mask combination. Conversely, plasma etching presents pattern profile challenges because of its inability to independently control ion and neutral flux. In this work, we introduce a new cyclic transient-based process, called transient-assisted plasma etching (TAPE). A cycle of TAPE is a short exposure step to a sustained flow of reactant before the reactant gas injection is stopped in the second step, resulting in a plasma transient. As the plasma ignites and a substantial amount of etchant remains, a chemically driven etching process occurs, akin to conventional etching. Later in the transient, the modified surface is exposed to a reduced etchant quantity and a sustained ion bombardment, in a similar way to ALE. The cointegration of conventional etching and atomic layer etching allows interesting compromises between etch control and processing time. Going for a transient plasma allows to provide the time and conditions needed for the necessary plasma-surface interactions to occur in one step. In this perspective, the mechanisms behind etch rate, profile correction, and conservation of surface composition using amorphous carbon, as a benchmark, are discussed.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"56 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospects\",\"authors\":\"Atefeh Fathzadeh, Philippe Bezard, Maxime Darnon, Inge Manders, T. Conard, I. Hoflijk, Frederic Lazzarino, S. de Gendt\",\"doi\":\"10.1116/6.0003380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Atomic layer etching (ALE) schemes are often deemed economically unviable due to their slow pace and are not suited for every material/hard-mask combination. Conversely, plasma etching presents pattern profile challenges because of its inability to independently control ion and neutral flux. In this work, we introduce a new cyclic transient-based process, called transient-assisted plasma etching (TAPE). A cycle of TAPE is a short exposure step to a sustained flow of reactant before the reactant gas injection is stopped in the second step, resulting in a plasma transient. As the plasma ignites and a substantial amount of etchant remains, a chemically driven etching process occurs, akin to conventional etching. Later in the transient, the modified surface is exposed to a reduced etchant quantity and a sustained ion bombardment, in a similar way to ALE. The cointegration of conventional etching and atomic layer etching allows interesting compromises between etch control and processing time. Going for a transient plasma allows to provide the time and conditions needed for the necessary plasma-surface interactions to occur in one step. In this perspective, the mechanisms behind etch rate, profile correction, and conservation of surface composition using amorphous carbon, as a benchmark, are discussed.\",\"PeriodicalId\":170900,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology A\",\"volume\":\"56 6\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology A\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003380\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
原子层蚀刻 (ALE) 方案由于速度慢,通常被认为在经济上不可行,而且并不适合每种材料/硬掩膜组合。相反,等离子刻蚀由于无法独立控制离子和中性通量,因此对图案轮廓提出了挑战。在这项工作中,我们引入了一种基于循环瞬态的新工艺,称为瞬态辅助等离子刻蚀(TAPE)。TAPE 的一个循环是在第二步停止注入反应物气体之前的一个短暂的反应物持续流暴露步骤,从而产生等离子体瞬态。当等离子体点燃并残留大量蚀刻剂时,就会发生化学驱动的蚀刻过程,类似于传统的蚀刻。在瞬态过程的后期,改性表面会暴露在蚀刻液数量减少和持续离子轰击的环境中,这与 ALE 类似。传统蚀刻和原子层蚀刻的结合可以在蚀刻控制和加工时间之间做出有趣的妥协。采用瞬态等离子体可为一步完成必要的等离子体-表面相互作用提供所需的时间和条件。从这个角度出发,以无定形碳为基准,讨论了蚀刻速率、轮廓校正和表面成分保持背后的机制。
Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospects
Atomic layer etching (ALE) schemes are often deemed economically unviable due to their slow pace and are not suited for every material/hard-mask combination. Conversely, plasma etching presents pattern profile challenges because of its inability to independently control ion and neutral flux. In this work, we introduce a new cyclic transient-based process, called transient-assisted plasma etching (TAPE). A cycle of TAPE is a short exposure step to a sustained flow of reactant before the reactant gas injection is stopped in the second step, resulting in a plasma transient. As the plasma ignites and a substantial amount of etchant remains, a chemically driven etching process occurs, akin to conventional etching. Later in the transient, the modified surface is exposed to a reduced etchant quantity and a sustained ion bombardment, in a similar way to ALE. The cointegration of conventional etching and atomic layer etching allows interesting compromises between etch control and processing time. Going for a transient plasma allows to provide the time and conditions needed for the necessary plasma-surface interactions to occur in one step. In this perspective, the mechanisms behind etch rate, profile correction, and conservation of surface composition using amorphous carbon, as a benchmark, are discussed.