{"title":"温度对银(Ag)辅助电化学蚀刻硅纳米线(SINWs)电气和光学特性的影响","authors":"P. Nath, D. Sarkar","doi":"10.1007/s13538-024-01483-1","DOIUrl":null,"url":null,"abstract":"<p>The present work deals with the study of the effect of temperature on the Raman spectroscopy and electrical properties of the silicon nanowires. The nanowires are fabricated through silver assisted electrochemical etching process. Prior to these studies, the fabricated nanowires are characterized through field emission scanning electron microscopy (FESEM), field emission transmission electron microscopy (FETEM), and X-ray diffraction (XRD) measurements. FESEM reveals the vertical alignment of the nanowires. FETEM indicates the materials to be highly crystalline, which is also complemented by the XRD result. Raman peak is blue-shifted with a decrease of temperature suggesting lattice disturbance at low temperature. Temperature-dependent current-voltage (I-V) measurements are fitted with Cheung’s model and the characteristic parameters viz. ideality factor (<i>n</i>), barrier height (<i>ϕ</i><sub><i>b</i></sub>), and series resistance (<i>R</i><sub><i>s</i></sub>) are estimated from the fitted plots. At lower temperatures, the value of <i>n</i> highly deviates from the ideal value of unity and is 23.42 at 110 K. The materials are observed to obey space charge limited conduction (SCLC) to trap charge limit current (TCLC) with increasing bias at lower temperatures.</p>","PeriodicalId":499,"journal":{"name":"Brazilian Journal of Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Temperature on the Electrical and Optical Properties of Silver (Ag) Assisted Electrochemically Etched Silicon Nanowires (SINWs)\",\"authors\":\"P. Nath, D. Sarkar\",\"doi\":\"10.1007/s13538-024-01483-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The present work deals with the study of the effect of temperature on the Raman spectroscopy and electrical properties of the silicon nanowires. The nanowires are fabricated through silver assisted electrochemical etching process. Prior to these studies, the fabricated nanowires are characterized through field emission scanning electron microscopy (FESEM), field emission transmission electron microscopy (FETEM), and X-ray diffraction (XRD) measurements. FESEM reveals the vertical alignment of the nanowires. FETEM indicates the materials to be highly crystalline, which is also complemented by the XRD result. Raman peak is blue-shifted with a decrease of temperature suggesting lattice disturbance at low temperature. Temperature-dependent current-voltage (I-V) measurements are fitted with Cheung’s model and the characteristic parameters viz. ideality factor (<i>n</i>), barrier height (<i>ϕ</i><sub><i>b</i></sub>), and series resistance (<i>R</i><sub><i>s</i></sub>) are estimated from the fitted plots. At lower temperatures, the value of <i>n</i> highly deviates from the ideal value of unity and is 23.42 at 110 K. The materials are observed to obey space charge limited conduction (SCLC) to trap charge limit current (TCLC) with increasing bias at lower temperatures.</p>\",\"PeriodicalId\":499,\"journal\":{\"name\":\"Brazilian Journal of Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-05-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Brazilian Journal of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1007/s13538-024-01483-1\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Brazilian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1007/s13538-024-01483-1","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
本研究涉及温度对硅纳米线的拉曼光谱和电学特性的影响。纳米线是通过银辅助电化学蚀刻工艺制作的。在进行这些研究之前,通过场发射扫描电子显微镜(FESEM)、场发射透射电子显微镜(FETEM)和 X 射线衍射(XRD)测量对制备的纳米线进行了表征。场发射扫描电子显微镜显示了纳米线的垂直排列。场发射透射电子显微镜显示材料具有高度结晶性,X 射线衍射结果也补充了这一点。拉曼峰随温度降低而蓝移,表明低温时晶格紊乱。随温度变化的电流-电压(I-V)测量结果与 Cheung 模型相拟合,并根据拟合图估算出特征参数,即理想度系数(n)、势垒高度(jb)和串联电阻(Rs)。在较低温度下,n 值严重偏离理想的统一值,在 110 K 时为 23.42。在较低温度下,随着偏压的增加,观察到材料服从空间电荷限制传导(SCLC)到阱电荷限制电流(TCLC)。
Effect of Temperature on the Electrical and Optical Properties of Silver (Ag) Assisted Electrochemically Etched Silicon Nanowires (SINWs)
The present work deals with the study of the effect of temperature on the Raman spectroscopy and electrical properties of the silicon nanowires. The nanowires are fabricated through silver assisted electrochemical etching process. Prior to these studies, the fabricated nanowires are characterized through field emission scanning electron microscopy (FESEM), field emission transmission electron microscopy (FETEM), and X-ray diffraction (XRD) measurements. FESEM reveals the vertical alignment of the nanowires. FETEM indicates the materials to be highly crystalline, which is also complemented by the XRD result. Raman peak is blue-shifted with a decrease of temperature suggesting lattice disturbance at low temperature. Temperature-dependent current-voltage (I-V) measurements are fitted with Cheung’s model and the characteristic parameters viz. ideality factor (n), barrier height (ϕb), and series resistance (Rs) are estimated from the fitted plots. At lower temperatures, the value of n highly deviates from the ideal value of unity and is 23.42 at 110 K. The materials are observed to obey space charge limited conduction (SCLC) to trap charge limit current (TCLC) with increasing bias at lower temperatures.
期刊介绍:
The Brazilian Journal of Physics is a peer-reviewed international journal published by the Brazilian Physical Society (SBF). The journal publishes new and original research results from all areas of physics, obtained in Brazil and from anywhere else in the world. Contents include theoretical, practical and experimental papers as well as high-quality review papers. Submissions should follow the generally accepted structure for journal articles with basic elements: title, abstract, introduction, results, conclusions, and references.