I. A. Fedotov, I. Yu. Pashen’kin, E. V. Skorokhodov, N. S. Gusev
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Creation of Submicrometer Magnetoresistive Tunnel Junction CoFeB/MgO/CoFeB Using an HSQ/PMMA Resistive Mask
Abstract
The technology has been developed for manufacturing the magnetoresistive tunnel junction based on CoFeB/MgO/CoFeB layers with typical lateral sizes in the range from 200 to 700 nm by means of a set of HSQ/PMMA electronic resistive masks. To study the processes of magnetization reversal in the obtained samples, magnetoresistance curves are plotted. It is shown that elements with both vortex and quasi-uniform distributions of free layer magnetization are revealed, which depends on the structure of the magnetosensitive layer and the geometric parameters of the magnetoresistive tunnel junctions. Moreover, the width of the front of magnetization reversal in the elements with quasi-uniform distributions ranges from 2 to 6 Oe.
期刊介绍：
The Physics of Metals and Metallography (Fizika metallov i metallovedenie) was founded in 1955 by the USSR Academy of Sciences. Its scientific profile involves the theory of metals and metal alloys, their electrical and magnetic properties, as well as their structure, phase transformations, and principal mechanical properties. The journal also publishes scientific reviews and papers written by experts involved in fundamental, application, and technological studies. The annual volume of publications amounts to some 250 papers submitted from 100 leading national scientific institutions.
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