用于制造量子计算机的 28Si 植入铝薄膜层交换过程中的结晶动力学:理论模型

Ella Schneider, Jonathan England
{"title":"用于制造量子计算机的 28Si 植入铝薄膜层交换过程中的结晶动力学:理论模型","authors":"Ella Schneider, Jonathan England","doi":"10.1116/6.0003638","DOIUrl":null,"url":null,"abstract":"We are investigating a novel enrichment process that could allow the use of industrial complementary metal–oxide–semiconductor implanters to manufacture “quantum grade” 28Si layers for use in quantum computers. Our implanted layer exchange enrichment process leverages conventional deposition-based layer exchange approaches but replaces a step of depositing a Si layer above an Al layer with a 28Si implant into the top of an Al layer. A subsequent anneal dissolves Si into Al beneath the implanted region where Si diffuses and either epitaxially grows onto the substrate or forms poly-crystals in the Al [Schneider and England, ACS Appl. Mater. Interfaces 15, 21609 (2023)]. We have developed a qualitative model using simple assumptions and boundary conditions to estimate characteristic times and rates of epitaxy or poly-crystallization for this novel layer exchange process. We have used the model to explain crystallization outcomes reported in this paper and previously. We find that the absence of an oxide boundary layer separating Si and Al allows Si diffusion to become established within the first second of all the anneals studied and that crystallization actually completes during the temperature ramp of most of the anneals. The rapid evolution of Si supersaturation in Al beneath the implanted layer explains the ratios of epitaxial growth to poly-crystallization observed after these anneals. We use this understanding to propose the implant layer exchange conditions that could produce the highest quality mono-crystalline quantum grade Si.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"53 4","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Crystallization kinetics during layer exchange of 28Si implanted Al films for fabrication of quantum computers: A theoretical model\",\"authors\":\"Ella Schneider, Jonathan England\",\"doi\":\"10.1116/6.0003638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We are investigating a novel enrichment process that could allow the use of industrial complementary metal–oxide–semiconductor implanters to manufacture “quantum grade” 28Si layers for use in quantum computers. Our implanted layer exchange enrichment process leverages conventional deposition-based layer exchange approaches but replaces a step of depositing a Si layer above an Al layer with a 28Si implant into the top of an Al layer. A subsequent anneal dissolves Si into Al beneath the implanted region where Si diffuses and either epitaxially grows onto the substrate or forms poly-crystals in the Al [Schneider and England, ACS Appl. Mater. Interfaces 15, 21609 (2023)]. We have developed a qualitative model using simple assumptions and boundary conditions to estimate characteristic times and rates of epitaxy or poly-crystallization for this novel layer exchange process. We have used the model to explain crystallization outcomes reported in this paper and previously. We find that the absence of an oxide boundary layer separating Si and Al allows Si diffusion to become established within the first second of all the anneals studied and that crystallization actually completes during the temperature ramp of most of the anneals. The rapid evolution of Si supersaturation in Al beneath the implanted layer explains the ratios of epitaxial growth to poly-crystallization observed after these anneals. We use this understanding to propose the implant layer exchange conditions that could produce the highest quality mono-crystalline quantum grade Si.\",\"PeriodicalId\":170900,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology A\",\"volume\":\"53 4\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology A\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003638\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

我们正在研究一种新颖的富集工艺,这种工艺可以利用工业互补金属氧化物半导体植入器制造 "量子级 "28Si 层,用于量子计算机。我们的植入式层交换富集工艺利用了传统的沉积式层交换方法,但将在铝层上方沉积硅层的步骤改为在铝层顶部植入 28Si。随后的退火将硅溶解到植入区域下方的铝中,硅在该区域扩散并外延生长到基底上或在铝中形成多晶体[Schneider 和 England,ACS Appl. Mater. Interfaces 15,21609 (2023)]。我们利用简单的假设和边界条件建立了一个定性模型,用于估算这种新型层交换过程的外延或多晶化的特征时间和速率。我们使用该模型解释了本文和之前报告的结晶结果。我们发现,在所有研究的退火过程中,由于没有氧化物边界层将硅和铝分隔开来,因此硅扩散在退火的第一秒钟内就建立起来了,而且结晶实际上是在大多数退火过程的温度斜坡期间完成的。植入层下铝中硅过饱和的快速演变解释了这些退火后观察到的外延生长与多晶化的比例。我们利用这一认识提出了能够生产出最高质量的单晶量子级硅的植入层交换条件。
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Crystallization kinetics during layer exchange of 28Si implanted Al films for fabrication of quantum computers: A theoretical model
We are investigating a novel enrichment process that could allow the use of industrial complementary metal–oxide–semiconductor implanters to manufacture “quantum grade” 28Si layers for use in quantum computers. Our implanted layer exchange enrichment process leverages conventional deposition-based layer exchange approaches but replaces a step of depositing a Si layer above an Al layer with a 28Si implant into the top of an Al layer. A subsequent anneal dissolves Si into Al beneath the implanted region where Si diffuses and either epitaxially grows onto the substrate or forms poly-crystals in the Al [Schneider and England, ACS Appl. Mater. Interfaces 15, 21609 (2023)]. We have developed a qualitative model using simple assumptions and boundary conditions to estimate characteristic times and rates of epitaxy or poly-crystallization for this novel layer exchange process. We have used the model to explain crystallization outcomes reported in this paper and previously. We find that the absence of an oxide boundary layer separating Si and Al allows Si diffusion to become established within the first second of all the anneals studied and that crystallization actually completes during the temperature ramp of most of the anneals. The rapid evolution of Si supersaturation in Al beneath the implanted layer explains the ratios of epitaxial growth to poly-crystallization observed after these anneals. We use this understanding to propose the implant layer exchange conditions that could produce the highest quality mono-crystalline quantum grade Si.
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