Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI2 van der Waals heterostructure

Valley-polarized quantum anomalous Hall effect (VQAHE), combined nontrivial band topology with valleytronics, is of importance for both fundamental sciences and emerging applications. However, the experimental realization of this property is challengeable. Here, by using first-principles calculations and modal analysis, we predict a mechanism of producing VQAHE in two-dimensional ferromagnetic van der Waals germanene/MnI2 heterostructure. This heterostructure exhibits both valley anomalous Hall effect and VQAHE due to the joint effects of magnetic exchange effect and spin-orbital coupling with the aid of anomalous Hall conductance and chiral edge state. Moreover interestingly, through the electrical modulation of ferroelectric polarization state in In2Se3, the germanene/MnI2/In2Se3 heterostructure can undergo reversible switching from a semiconductor to a metallic behavior. This work offers a guiding advancement for searching for VQAHE in ferromagnetic van der Waals heterostructures and exploiting energy-efficient devices based on the VQAHE.