High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact

β-Ga2O3 power diodes were expected to possess low turn-on voltage (Von), low reverse leakage (JR), and high blocking capability for low power losses. In this work, a low Von (0.48 V) β-Ga2O3 heterojunction barrier Schottky diode (HJBS) with Tungsten Schottky contact was achieved. Benefitting from the lateral depletion of p+-NiO to suppress JR originating from the low Schottky barrier, the blocking capability of β-Ga2O3 HJBS was enhanced. The spacing width of p+-NiO was systematically studied to reveal its modulation effect on forward and reverse characteristics. This work provides a promising strategy for improving rectifier efficiency of β-Ga2O3 diodes.