阴离子(S-2 和 Se-2)置换对过渡金属(钡钡)铬化包晶光伏特性的影响

Naincy Pandit, Anusha Dubey, T. Joshi, Akash Shukla, Upasana Rani, Peeyush Kumar Kamlesh, Rajeev Gupta, Tanuj Kumar, Kulwinder Kaur, Ajay Singh Verma
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引用次数: 0

摘要

材料科学家们一直在加紧寻找低成本、高稳定性、无毒的能源转换设备所需的高效材料。在本文中,新兴材料启发我们研究一种由碱土金属(钡)制成的包晶共轭物。因此,我们通过 WIEN2K 代码中的第一原理计算,确定了一些基本特性和一些基于应用的特性,从而解释了它们在能量转换设备制造中的适用性。Birch-Murnaghan 拟合验证了结构稳定性,热力学性质中的吉布斯函数解释了不同温度和压力范围内的热稳定性。通过使用改良贝克-约翰逊(mBJ)电位,这些材料的电子和光学特性使人们对它们的性质有了深入的了解:研究发现它们是直接带隙半导体,BaZrS3(BaZrSe3)的计算值分别为 1.77[式:见正文]eV(1.25[式:见正文]eV)。这两种材料对低能冲击光子都表现出透明性,并在紫外区表现出吸收和光导现象。这两种材料对低能撞击光子都表现出透明性,并在紫外区表现出吸收和光导现象。在热电参数方面,优点系数(ZT)在室温下为一,随着温度的升高会降低到 0.98,这表明这些材料将有助于热电设备。在应用方面,我们计算了光谱极限最大效率(SLME),发现 BaZrS3(BaZrSe3)的效率分别从 6.5% 增加到 27.1%(8.1% 到 31.9%)。在室温下,薄膜厚度从 100[式:见正文]纳米增加到 1[式:见正文][式:见正文]米,然后趋于稳定。这项新兴研究表明,这些材料可作为能量转换设备制造中的一种警戒物质,所提出的结果与实验数据和其他理论数据相符。根据这些材料的光学和热电参数,我们推断这两种材料在能量转换设备制造中都是很有前途的候选材料。
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Effect of anion (S−2 & Se−2) replacement on photovoltaic properties in transition metal (Ba-Barium) chalcogenide perovskites
Material scientists have stepped up their search for efficient materials in low-cost, high-stability, nontoxic energy conversion devices. In this paper, emerging materials inspire us to study one of the perovskite chalcogens made from alkaline-earth metals (Barelium). Therefore, we determined some fundamental properties with some application-based properties, which explained their applicability in energy conversion device fabrication by first-principles calculation within the WIEN2K Code. Structure stability has been verified by Birch–Murnaghan fits and thermal stability at different temperatures and pressure ranges is explained by Gibbs function in thermodynamic properties. By using modified Becke–Johnson (mBJ) potential, electronic and optical characteristics of these materials provide insight into their nature: they were revealed to be direct bandgap semiconductors with the calculated values of 1.77[Formula: see text]eV (1.25[Formula: see text]eV) for BaZrS3(BaZrSe3), respectively. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. In the thermoelectric parameter, the figure of merit (ZT) is unity at room temperature and decreases up to 0.98 with temperature increment which reveals that these materials will be helpful in thermoelectric devices. As per the application part, we carried out the calculation of the spectroscopic limited maximum efficiency (SLME) and found that efficiency increases from 6.5% to 27.1% (8.1% to 31.9%) for BaZrS3 (BaZrSe3), respectively. The film thickness increased from 100[Formula: see text]nm to 1[Formula: see text][Formula: see text]m at room temperature and then stabilized. This emerging study shows that these materials can be used as an alert substance in energy conversion device fabrications and the proposed outcomes are in good acceptance with the experimental and other theoretical data. As per the optical and thermoelectric parameters of these materials, we infer that both are promising candidates in energy conversion device fabrication.
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