用于某些电子设备的(Bi0.5La0.5Fe)0.5(Bi0.5Na0.5Ti)0.5O3 超晶石的结构、介电和光学特性研究

R. K. Bhuyan, S. K. Parida
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摘要

本文概述了采用传统固态反应方法合成的镧系改性(Bi[式:见正文]La[式:见正文]Fe)[式:见正文](Bi[式:见正文]Na[式:见正文]Ti)[式:见正文]O3(BLF-BNT)单包晶氧化物的结构、介电、复阻抗和光学特性的研究。通过里特维尔德细化,BLF-BNT 陶瓷的晶体结构被确认为四方晶,平均晶粒尺寸估计为 43.6[式:见正文]纳米。掺杂 La 的 BLF-BNT 陶瓷的介电性能显示出 Maxwell-Wagner 型介电分散的存在。这表明材料内部的晶界和界面存在电荷积累。复合阻抗和复合电模量研究用于深入了解材料的微观介电弛豫和传导过程。电模量光谱揭示了非戴贝型弛豫过程的存在,包括局部和长程弛豫过程。奈奎斯特图和科尔-科尔图显示了 BLF-BNT 陶瓷的半导体性质。在基于电阻抗和模量虚部的阿伦尼乌斯方法的帮助下,我们估算出了活化能和弛豫时间。这些参数有助于深入了解材料的电特性和传导机制。此外,还进行了无损化学分析技术--拉曼光谱分析,以通过原子振动确认拟议系统的组成和结构完整性。此外,我们还利用陶氏关系对该材料的带隙能进行了估算,发现其带隙能为 1.69[公式:见正文]eV。这表明,BLF-BNT 陶瓷具有适合某些设备应用的带隙,使其成为各种技术领域的理想候选材料。此外,对所提陶瓷的整体综合研究为其在各种电子器件中的潜在应用提供了宝贵的见解和新的可能性。
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Investigation of structural, dielectric and optical properties of the (Bi0.5La0.5Fe)0.5(Bi0.5Na0.5Ti)0.5O3perovskite for some electronic devices
This paper outlines the investigation of structural, dielectric, complex impedance and optical properties of lanthanum-modified (Bi[Formula: see text]La[Formula: see text]Fe)[Formula: see text](Bi[Formula: see text]Na[Formula: see text]Ti)[Formula: see text]O3 (BLF–BNT) single perovskite oxide synthesized by conventional solid-state reaction method. From Rietveld refinement, the crystal structure of the BLF–BNT ceramic has confirmed a tetragonal and the estimated average crystallite size is found to be 43.6[Formula: see text]nm. The dielectric properties of the La-doped BLF–BNT ceramic reveal the presence of Maxwell–Wagner-type dielectric dispersion. This suggests the occurrence of charge accumulation at grain boundaries and interfaces within the material. The complex impedance and complex electric modulus studies were employed to gain insight into the microscopic dielectric relaxations and conduction processes of the material. The electric modulus spectroscopy reveals the existence of nonDebye-type relaxation processes, including localized and long-range relaxation processes. The Nyquist and Cole–Cole plots show the semiconducting nature of the BLF–BNT ceramic. With the help of the Arrhenius method based on the imaginary portion of the electrical impedance and modulus, activation energies and relaxation times have been estimated. These parameters contribute to a deeper understanding of the electrical properties and conduction mechanisms within the material. Further, Raman spectroscopy, a nondestructive chemical analysis technique, was conducted to confirm the composition and structural integrity of the proposed system through its atomic vibrations. Also, the bandgap energy of the material has been estimated using Tauc’s relation and is found to be 1.69[Formula: see text]eV. This signifies that the BLF–BNT ceramic possesses a suitable bandgap for certain device applications, making it a promising candidate in various technological fields. Moreover, the overall comprehensive study of the proposed ceramic provides valuable insight and opens new possibilities for its potential applications in various electronic devices.
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