Properties investigation of ZnS/porous silicon heterojunction for gas sensing

In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully synthesized over the Porous silicon substrate by the spray pyrolysis method. The properties of the as-prepared samples were characterized X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous silicon as a gas-sensing show that the maximum sensitivity is found to be 5.11 at ZnS concentration of 0.5 M and etching time of 15 min compared to the other sensitivities. The ZnS-PSi heterojunction based gas sensor may be used for UV-light photo-detectors due to a valuable properties such as high sensitivity and fast response.