Characterization of GaAs and GaAs/Cr/GaAs interfacial layers fabricated via magnetron sputtering on silicon (100)

The obtaining and study of semiconductor materials have been topics of interest for decades. However, alternatives that allow greater versatility at the time of their application have yet to be explored, such as the inclusion of some transition metals. In this work, we report the obtaining of GaAs and GaAs/Cr/GaAs layers, which were prepared by r.f. magnetron sputtering on a Si (100) substrate by varying the deposition time of the intermediate Cr layer for t = 5 min and 10 min, respectively. Scanning electron microscopy in cross-section was carried out to determine the growth mode of the GaAs and GaAs/Cr/GaAs films. The percentage of the elements in the GaAs/Cr/GaAs thin films was determined through energy dispersive spectroscopy (EDS) in cross-sections along the entire layer thickness. X-ray diffraction and micro-Raman spectroscopy at room temperature were measured to analyze the formation of CrAs and GaCr binary phases by diffusion across interlayers. Finally, we conclude on the possible use of this technique to obtain semiconductor alloys with Cr inclusion.