Resistor-to-Schottky barrier analytical model for ohmic contact test structures

Analytical models for investigating Metal-Semiconductor (M-S) ohmic contacts in test structures have conventionally included resistive-only contact interfaces. Given that M-S contacts are fundamentally governed by electron tunnelling across the potential energy barrier at the M-S interface, this simplified approach may result in misinterpretation. This paper describes, in detail, a novel Resistor-to-Schottky (RSB) barrier analytical model that enables a more in-depth exploration of the physics underlying ohmic contacts. The proposed model is analysed and compared with models constructed using the semiconductor device simulator tool TCAD. The study reveals significant differences in outcomes when employing the RSB model rather than the conventional Transmission Line (TLM) model and contributes to a more comprehensive understanding of M-S ohmic contacts in test structures.