电热流化床反应器中挥发性合成产物的泄漏对碳化硅产量的影响

V. S. Kuzevanov, S. Zakozhurnikov, G. Zakozhurnikova
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摘要

目标: 计算电热流化床反应器中挥发性合成产物的泄漏对碳化硅产量的影响,并建立精细碳化硅合成的一般模型。计算电热流化床反应器中挥发性合成产物泄漏对碳化硅产量的影响,并建立精细碳化硅合成的一般模型。这将通过将化学反应的挥发性产物从反应器的反应容积中随流化惰性气体泄漏的数学模型具体化来实现。研究了在电热流化床中合成碳化硅的方法。通过将计算结果与现有的在高温流化床反应器中合成碳化硅的实验数据进行比较,验证了挥发性产物的泄漏模型。比较参数为:碳化硅的质量产率,以及在反应器中将二氧化硅分批装入反应容积的总合成时间。确定了流化床合成碳化硅一般模型中参数 p 的值。参数 p 等于参与形成氧化硅的含碳粒子数与二氧化硅粒子总数之比。它还表征了在流化床不同工作温度下电荷颗粒稳定复合物的组成。结果表明,在流化床温度较高(T = 1800°C)时,合成碳化硅质量的计算值与实验值之间的差异不超过 15.5%,而随着工作温度的降低,在 T = 1450°C时,差异降低到 4.7%。碳化硅合成的通用计算模型内置了计算化学反应挥发产物泄漏的程序,可以分析电热流化床反应器中碳化硅生产的变体。在这种情况下,重要的是在不进行昂贵的初步实验研究的情况下建立一个节能的工作循环。
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Effect of leakage of volatile synthesis products on silicon carbide yield in an electrothermal fluidized bed reactor
Objectives. To calculate the effect of leakage of volatile synthesis products on silicon carbide yield in an electrothermal fluidized bed reactor, as well as to develop a general model of the synthesis of finely divided silicon carbide. This will be achieved by particularizing a mathematical model of leakage of volatile products of chemical reactions from the reaction volume of the reactor with the fluidizing inert gas.Methods. As a method to produce silicon carbide, synthesis in an electrothermal fluidized bed was studied. The model of leakage of volatile products was validated by comparing the calculation results with existing experimental data on the SiC synthesis in a hightemperature fluidized bed reactor. The comparison parameters were: mass yield of silicon carbide, and the total synthesis time in a reactor with batch loading of silicon dioxide into the reaction volume.Results. The value of the parameter p in the general model of SiC synthesis in a fluidized bed was established. The parameter p is equal to the ratio of the number of carbon-containing particles involved in the formation of SiO, to the total number of silicon dioxide particles. It also characterizes the composition of stable complexes of particles of the charge at various operating temperatures of the fluidized bed. The discrepancy between the calculated and experimental values of the masses of the synthesized silicon carbide was shown not to exceed 15.5% at a high temperature of the fluidized bed (T = 1800°C) and decreases with a decrease in the operating temperature to 4.7% at T = 1450°C.Conclusions. The general computational model for silicon carbide synthesis with a built-in procedure for calculating the leakage of volatile products of chemical reactions enables the variants of SiC production in electrothermal fluidized bed reactors to be analyzed. In this case, it is important to establish an energy-efficient working cycle without preliminary expensive experimental studies.
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