二极管温度传感器碱基耗尽区的杂质分布

Pub Date : 2024-05-01 DOI:10.1063/10.0025635

R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova, D. B. Istamov, Sh. M. Kuliyev, A. A. Khakimov, A. B. Bobonazarov, A. Z. Rakhmatov

{"title":"二极管温度传感器碱基耗尽区的杂质分布","authors":"R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova, D. B. Istamov, Sh. M. Kuliyev, A. A. Khakimov, A. B. Bobonazarov, A. Z. Rakhmatov","doi":"10.1063/10.0025635","DOIUrl":null,"url":null,"abstract":"The performance of diode temperature sensors depends on their base-depleted region thickness and impurity distribution profile. In this article, we study the boron diffusion process in the thin base region with a thickness of about 1 μm. We show that, for the proposed p+–n–p temperature sensor structure, the impurity distribution in the n region has the form of an asymmetric parabola, with an extreme concentration point shifted towards the “upper” p+ region.","PeriodicalId":0,"journal":{"name":"","volume":"34 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Distribution of impurities in base-depleted region of diode temperature sensor\",\"authors\":\"R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova, D. B. Istamov, Sh. M. Kuliyev, A. A. Khakimov, A. B. Bobonazarov, A. Z. Rakhmatov\",\"doi\":\"10.1063/10.0025635\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of diode temperature sensors depends on their base-depleted region thickness and impurity distribution profile. In this article, we study the boron diffusion process in the thin base region with a thickness of about 1 μm. We show that, for the proposed p+–n–p temperature sensor structure, the impurity distribution in the n region has the form of an asymmetric parabola, with an extreme concentration point shifted towards the “upper” p+ region.\",\"PeriodicalId\":0,\"journal\":{\"name\":\"\",\"volume\":\"34 9\",\"pages\":\"\"},\"PeriodicalIF\":0.0,\"publicationDate\":\"2024-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/10.0025635\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/10.0025635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

二极管温度传感器的性能取决于其基极薄区的厚度和杂质分布状况。本文研究了厚度约为 1 μm 的薄基区中的硼扩散过程。我们发现，对于所提出的 p+-n-p 温度传感器结构，n 区的杂质分布呈不对称抛物线形式，极端浓度点偏向 "上部 "p+ 区。

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Distribution of impurities in base-depleted region of diode temperature sensor

The performance of diode temperature sensors depends on their base-depleted region thickness and impurity distribution profile. In this article, we study the boron diffusion process in the thin base region with a thickness of about 1 μm. We show that, for the proposed p+–n–p temperature sensor structure, the impurity distribution in the n region has the form of an asymmetric parabola, with an extreme concentration point shifted towards the “upper” p+ region.

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