GePb 合金的分子束外延生长与表征

Tyler T. McCarthy, Allison M. McMinn, Xiaoyang Liu, Razine Hossain, Xin Qi, Zheng Ju, Mark Mangus, Shui-Qing Yu, Yong-Hang Zhang
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摘要

作为红外探测器、量子材料和高速电子设备的潜在替代品,GePb 等铅基 IV 族合金越来越受到人们的关注。由于铅在 Ge-Pb 体系中的固体溶解度极低,其生长仍面临挑战。本文报告了在 Ge(100)基底上分子束外延生长 GePb 合金薄膜的情况。Ge 和 Pb 的喷射单元用于独立控制通量比。根据使用高分辨率 X 射线衍射法对生长的薄膜进行的表征,发现最佳衬底温度接近热电偶温度 300 ℃。根据拉曼光谱和卢瑟福反向散射光谱的估算,Ge:Pb 束等效压力比从 10:1 到 1:1 的巨大变化仅导致 Pb 成分从 0.74% 到 2.84% 的微小增加。扫描电子显微镜图像显示表面有大量的铅岛,这些铅岛或形成长梯形棒,或形成均匀的液滴,随着铅通量和生长时间的增加,铅岛的密度也在增加。
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Molecular beam epitaxy growth and characterization of GePb alloys
Pb based group-IV alloys such as GePb have been gaining interest as a potential alternative for infrared detectors, quantum materials, and high-speed electronic devices. Challenges remain in their growth due to the extremely low solid solubility of Pb in the Ge–Pb system. This paper reports molecular beam epitaxy growth of GePb alloy thin films on Ge(100) substrates. Effusion cells of Ge and Pb are used to control the flux ratio independently. The optimal substrate temperature is found to be near the thermocouple temperature of 300 °C based on the characterization of the grown films using high-resolution x-ray diffraction. A large change in the Ge:Pb beam equivalent pressure ratio from 10:1 to 1:1 results in only a minimal increase of the Pb composition from 0.74% to 2.84% as estimated from Raman spectroscopy and Rutherford backscattering spectrometry. Scanning electron microscopy images show a large volume of Pb islands on the surface that form into either long trapezoidal rods or uniform droplets, with increasing Pb flux and growth time the density of Pb islands increased.
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