Nabil Ahmed, M. Razanoelina, M. Hori, Akira Fujiwara, Yukinori Ono
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引用次数: 0
摘要
研究了在硅绝缘体金属氧化物半导体场效应晶体管中形成的电子层和空穴层之间的阻力,估计层间距离小至 18 纳米。阻力是在 10 K 条件下测量的,并绘制在电子密度和空穴密度所定义的平面上。分析表明,库仑阻力超过了相互竞争的虚声子阻力。观测到的阻力高达 103 - 104 Ω,表明电子层和空穴层之间存在很强的库仑相互作用。
Drag of electron-hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature
Drag between the electron-layer and the hole-layer formed in a silicon-on-insulator metal-oxide-semiconductor field-effect-transistor, with the estimated interlayer distance as small as 18 nm, is investigated. The drag resistance is measured at 10 K and mapped on the plane defined by the electron density and hole density. The analysis shows that the Coulomb drag predominates over the competing virtual-phonon drag. The observed drag resistance is as large as 103 - 104 Ω, indicating strong Coulomb interaction between the electron and hole layers.
期刊介绍:
Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).