低温下硅绝缘体金属氧化物半导体场效应晶体管中的电子-空穴双层阻力

IF 4.7 Q2 MATERIALS SCIENCE, BIOMATERIALS ACS Applied Bio Materials Pub Date : 2024-05-24 DOI:10.35848/1882-0786/ad5073

Nabil Ahmed, M. Razanoelina, M. Hori, Akira Fujiwara, Yukinori Ono

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引用次数: 0

摘要

研究了在硅绝缘体金属氧化物半导体场效应晶体管中形成的电子层和空穴层之间的阻力，估计层间距离小至 18 纳米。阻力是在 10 K 条件下测量的，并绘制在电子密度和空穴密度所定义的平面上。分析表明，库仑阻力超过了相互竞争的虚声子阻力。观测到的阻力高达 103 - 104 Ω，表明电子层和空穴层之间存在很强的库仑相互作用。

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Drag of electron-hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature

Drag between the electron-layer and the hole-layer formed in a silicon-on-insulator metal-oxide-semiconductor field-effect-transistor, with the estimated interlayer distance as small as 18 nm, is investigated. The drag resistance is measured at 10 K and mapped on the plane defined by the electron density and hole density. The analysis shows that the Coulomb drag predominates over the competing virtual-phonon drag. The observed drag resistance is as large as 103 - 104 Ω, indicating strong Coulomb interaction between the electron and hole layers.

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来源期刊

ACS Applied Bio Materials Chemistry-Chemistry (all)

CiteScore

9.40

自引率

2.10%

发文量

464

期刊介绍： ACS Applied Bio Materials is an interdisciplinary journal publishing original research covering all aspects of biomaterials and biointerfaces including and beyond the traditional biosensing, biomedical and therapeutic applications. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrates knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important bio applications. The journal is specifically interested in work that addresses the relationship between structure and function and assesses the stability and degradation of materials under relevant environmental and biological conditions.