P-type Gallium nitride creation through O+ implantation

P-type GaN was successfully achieved by vertically implanting positive monovalent cations of oxygen (O[Formula: see text]) into undoped (native n-type with an electron concentration of [Formula: see text][Formula: see text]cm[Formula: see text]) (0001) monocrystalline GaN. This implantation was carried out with an energy of 200[Formula: see text]keV and a dose of [Formula: see text] ions/cm2. In the absence of subsequent rapid thermal annealing (RTA) or when exposed to RTA at 950°C for 10[Formula: see text]s in a nitrogen ambient environment, temperature-dependent Hall measurements in a vacuum consistently indicated stable p-type conductivity. For the sample that underwent subsequent RTA, the room-temperature Hall hole concentration measured [Formula: see text][Formula: see text]cm[Formula: see text], the Hall resistivity was 0.44[Formula: see text][Formula: see text][Formula: see text]⋅[Formula: see text]cm, the Hall hole mobility reached 17.81[Formula: see text]cm2[Formula: see text]⋅[Formula: see text]V[Formula: see text][Formula: see text]⋅[Formula: see text]s[Formula: see text], and the acceptor ionization energy was determined to be 0.08[Formula: see text]eV. The doping efficiency was calculated at 5.5%. O[Formula: see text] ions effectively serve as acceptors, whether annealed or not. The p-type conductivity induced by O[Formula: see text] implantation in GaN is notably advantageous and holds practical significance for the ongoing development of future device technology.