MS-GIFT:等时几何分析的多面几何独立场逼近法

IF 3 3区 计算机科学 Q2 COMPUTER SCIENCE, SOFTWARE ENGINEERING Computer-Aided Design Pub Date : 2024-05-21 DOI:10.1016/j.cad.2024.103731
Meng-Yun Wang , Ye Ji , Lin Lan , Chun-Gang Zhu
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引用次数: 0

摘要

几何独立场近似(GIFT)技术是等几何分析(IGA)的扩展,它允许在不同空间对计算域和近似解场进行参数化。在 GIFT 方法的基础上,本文提出了一种新颖的 IGA 方法,该方法结合了用于多面几何表示的环形表面补丁,同时利用 B-样条或截断分层 B-样条(THB-样条)基础进行分析。通过在用于建模和逼近的不同基的参数域之间创建适当的偏射,我们的方法确保了计算域内的平滑性,并结合了 B 样条的紧凑支持或 THB 样条的局部细化潜力,从而获得了更高效、更精确的解决方案。为了提高参数化的质量,进而提高下游分析的精度,我们建议优化复合环形参数化。数值实例验证了我们建议的方法的有效性和优越性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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MS-GIFT: Multi-Sided Geometry-Independent Field ApproximaTion Approach for Isogeometric Analysis

The Geometry-Independent Field approximaTion (GIFT) technique, an extension of isogeometric analysis (IGA), allows for separate spaces to parameterize the computational domain and approximate solution field. Based on the GIFT approach, this paper proposes a novel IGA methodology that incorporates toric surface patches for multi-sided geometry representation, while utilizing B-spline or truncated hierarchical B-spline (THB-spline) basis for analysis. By creating an appropriate bijection between the parametric domains of distinct bases for modeling and approximation, our method ensures smoothness within the computational domain and combines the compact support of B-splines or the local refinement potential of THB-splines, resulting in more efficient and precise solutions. To enhance the quality of parameterization and consequently boost the accuracy of downstream analysis, we suggest optimizing the composite toric parameterization. Numerical examples validate the effectiveness and superiority of our suggested approach.

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来源期刊
Computer-Aided Design
Computer-Aided Design 工程技术-计算机:软件工程
CiteScore
5.50
自引率
4.70%
发文量
117
审稿时长
4.2 months
期刊介绍: Computer-Aided Design is a leading international journal that provides academia and industry with key papers on research and developments in the application of computers to design. Computer-Aided Design invites papers reporting new research, as well as novel or particularly significant applications, within a wide range of topics, spanning all stages of design process from concept creation to manufacture and beyond.
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