Tomoaki Kachi, Hayata Takahata, Ryunosuke Oka, Hisanori Ishiguro, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Yoshiki Saito, Koji Okuno
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引用次数: 0
摘要
研究并成功抑制了用于深紫外(DUV)发光二极管(LED)的氮化铝模板中裂纹的形成。通过原位晶片曲率测量和原位 X 射线衍射测量,评估了蓝宝石衬底上氮化铝厚层的应变值。研究发现,在氮化铝厚层生长过程中产生的拉伸应变来自氮化铝厚层和蓝宝石衬底之间的热膨胀差。当温度变化不超过 100 ℃ 时,氮化铝厚层生长过程中的拉伸应变不超过 0.1%,因此氮化铝厚层不会出现裂纹。此外,在这种无裂纹的 AlGaN 模板上生长的 DUV LED 层结构也不会出现裂纹。因此,要抑制用于制造 DUV LED 的模板中裂纹的形成,必须考虑到从成核层到厚层的生长温度变化所引起的热膨胀,从而优化其生长温度。
Effect of Growth Temperature on Strain during Growth and Crack Suppression in AlGaN Templates on Sapphire Substrates for Deep Ultraviolet Light‐Emitting Diodes
The crack formations in AlGaN templates for deep ultraviolet (DUV) light‐emitting diodes (LEDs) are investigated and successfully suppressed. The strain values in AlGaN thick layers on sapphire substrates by in situ wafer curvature measurements and ex situ X‐ray diffraction measurements are evaluated. It is found that the tensile strain during the AlGaN thick layer growth comes from a thermal expansion difference between the AlGaN thick layer and the sapphire substrate as the temperature changes from the AlN nucleation layer growth to the AlGaN thick layer growth. When the temperature change is 100 °C and less, the tensile strain of 0.1% and less is observed during the AlGaN thick layer growth, resulting in no crack formations in the AlGaN thick layer. Furthermore, a DUV LED layer structure grown on such a crack‐free AlGaN template shows no crack formations. Thus, to suppress crack formation in templates fabricated for DUV LEDs, their growth temperature must be optimized by considering thermal expansions caused by the changes in the growth temperature from the nucleation layer to the thick layer.
期刊介绍:
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physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.