Rui Chen, Kin Hong Ip, Xin Huang, Junhong Li, Zhiliang Dong, Men Shao, Min Xu, Weiyi Yang, Tingting Yan, Zhidong Li, Hui Zhang, Ji Ma, Sheng’an Yang, Qingming Chen
{"title":"增强 La0.7-xSmxCa0.3MnO3 外延薄膜的磁阻特性","authors":"Rui Chen, Kin Hong Ip, Xin Huang, Junhong Li, Zhiliang Dong, Men Shao, Min Xu, Weiyi Yang, Tingting Yan, Zhidong Li, Hui Zhang, Ji Ma, Sheng’an Yang, Qingming Chen","doi":"10.1142/s0217984924504281","DOIUrl":null,"url":null,"abstract":"<p>The electrical and magnetic properties of strongly correlated manganese oxides originate from and depend on the coupling of spin, orbital, lattice and other degrees of freedom, and can also be controlled by external stimuli (such as a magnetic field). Here, the films have been prepared using spin-coating method to determine the role of Jahn–Teller (JT) distortion and double exchange (DE) interaction in electronic transport and magnetoresistance (MR) by magnetic field in La<span><math altimg=\"eq-00005.gif\" display=\"inline\"><msub><mrow></mrow><mrow><mn>0</mn><mo>.</mo><mn>7</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span><span></span>Sm<sub><i>x</i></sub>Ca<span><math altimg=\"eq-00006.gif\" display=\"inline\"><msub><mrow></mrow><mrow><mn>0</mn><mo>.</mo><mn>3</mn></mrow></msub></math></span><span></span>MnO<sub>3</sub>/SrTiO<sub>3</sub>(001). The Sm-induced lattice distortion suppresses the metal-insulator transition temperature and increases the films’ resistivity, which is due to the weakening of the DE interaction between Mn<span><math altimg=\"eq-00007.gif\" display=\"inline\"><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span><span></span>–O<span><math altimg=\"eq-00008.gif\" display=\"inline\"><msup><mrow></mrow><mrow><mn>2</mn><mo>−</mo></mrow></msup></math></span><span></span>–Mn<span><math altimg=\"eq-00009.gif\" display=\"inline\"><msup><mrow></mrow><mrow><mn>4</mn><mo>+</mo></mrow></msup></math></span><span></span> ions and the enhancement of the single electron bandwidth. Moreover, the MR can be increased to 96.5% and the AMR can be increased to 66.6% under 1 T magnetic field. These findings indicate the importance of JT distortion in multi-field control of hole-doped perovskite manganites.</p>","PeriodicalId":18570,"journal":{"name":"Modern Physics Letters B","volume":"70 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced magnetoresistance properties in La0.7−xSmxCa0.3MnO3 epitaxial films\",\"authors\":\"Rui Chen, Kin Hong Ip, Xin Huang, Junhong Li, Zhiliang Dong, Men Shao, Min Xu, Weiyi Yang, Tingting Yan, Zhidong Li, Hui Zhang, Ji Ma, Sheng’an Yang, Qingming Chen\",\"doi\":\"10.1142/s0217984924504281\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The electrical and magnetic properties of strongly correlated manganese oxides originate from and depend on the coupling of spin, orbital, lattice and other degrees of freedom, and can also be controlled by external stimuli (such as a magnetic field). Here, the films have been prepared using spin-coating method to determine the role of Jahn–Teller (JT) distortion and double exchange (DE) interaction in electronic transport and magnetoresistance (MR) by magnetic field in La<span><math altimg=\\\"eq-00005.gif\\\" display=\\\"inline\\\"><msub><mrow></mrow><mrow><mn>0</mn><mo>.</mo><mn>7</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span><span></span>Sm<sub><i>x</i></sub>Ca<span><math altimg=\\\"eq-00006.gif\\\" display=\\\"inline\\\"><msub><mrow></mrow><mrow><mn>0</mn><mo>.</mo><mn>3</mn></mrow></msub></math></span><span></span>MnO<sub>3</sub>/SrTiO<sub>3</sub>(001). The Sm-induced lattice distortion suppresses the metal-insulator transition temperature and increases the films’ resistivity, which is due to the weakening of the DE interaction between Mn<span><math altimg=\\\"eq-00007.gif\\\" display=\\\"inline\\\"><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span><span></span>–O<span><math altimg=\\\"eq-00008.gif\\\" display=\\\"inline\\\"><msup><mrow></mrow><mrow><mn>2</mn><mo>−</mo></mrow></msup></math></span><span></span>–Mn<span><math altimg=\\\"eq-00009.gif\\\" display=\\\"inline\\\"><msup><mrow></mrow><mrow><mn>4</mn><mo>+</mo></mrow></msup></math></span><span></span> ions and the enhancement of the single electron bandwidth. Moreover, the MR can be increased to 96.5% and the AMR can be increased to 66.6% under 1 T magnetic field. These findings indicate the importance of JT distortion in multi-field control of hole-doped perovskite manganites.</p>\",\"PeriodicalId\":18570,\"journal\":{\"name\":\"Modern Physics Letters B\",\"volume\":\"70 1\",\"pages\":\"\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Modern Physics Letters B\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1142/s0217984924504281\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modern Physics Letters B","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1142/s0217984924504281","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
摘要
强相关锰氧化物的电学和磁学特性源于并取决于自旋、轨道、晶格和其他自由度的耦合,也可受外部刺激(如磁场)的控制。本文采用自旋涂层法制备了薄膜,以确定在 La0.7-xSmxCa0.3MnO3/SrTiO3(001) 中,Jahn-Teller(JT)畸变和双交换(DE)相互作用在电子传输和磁阻(MR)中的作用。Sm引起的晶格畸变抑制了金属-绝缘体转变温度并提高了薄膜的电阻率,这是由于Mn3+-O2--Mn4+离子之间的DE相互作用减弱以及单电子带宽增强所致。此外,在 1 T 磁场下,MR 可提高到 96.5%,AMR 可提高到 66.6%。这些发现表明了JT畸变在空穴掺杂透晶锰酸盐多场控制中的重要性。
Enhanced magnetoresistance properties in La0.7−xSmxCa0.3MnO3 epitaxial films
The electrical and magnetic properties of strongly correlated manganese oxides originate from and depend on the coupling of spin, orbital, lattice and other degrees of freedom, and can also be controlled by external stimuli (such as a magnetic field). Here, the films have been prepared using spin-coating method to determine the role of Jahn–Teller (JT) distortion and double exchange (DE) interaction in electronic transport and magnetoresistance (MR) by magnetic field in LaSmxCaMnO3/SrTiO3(001). The Sm-induced lattice distortion suppresses the metal-insulator transition temperature and increases the films’ resistivity, which is due to the weakening of the DE interaction between Mn–O–Mn ions and the enhancement of the single electron bandwidth. Moreover, the MR can be increased to 96.5% and the AMR can be increased to 66.6% under 1 T magnetic field. These findings indicate the importance of JT distortion in multi-field control of hole-doped perovskite manganites.
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