Ivan Vikulin, Oleksandr Nazarenko, Lidiya Vikulina, Pavlo Markolenko
{"title":"穿透辐射对磁晶体管灵敏度的影响","authors":"Ivan Vikulin, Oleksandr Nazarenko, Lidiya Vikulina, Pavlo Markolenko","doi":"10.3103/s0735272723060055","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>An experimental study of the effect of radiation emissions (neutrons, gamma radiation) on the sensitivity of industrial bipolar <i>n-p-n</i> magnetotransistors has been carried out. It has been shown that neutron irradiation leads to defects in the structure, which reduces the effective lifetime of the injected charge carriers and decreases the magnetosensitivity. Gamma radiation with increasing intensity first destroys the surface structural defects and increases the lifetime of carriers and magnetoresponsiveness, and then penetrates deeper forming defects and reducing magnetoresponsiveness. This makes it possible to use gamma radiation with an intensity of up to 10<sup>7</sup> R as a technological method of increasing magnetosensitivity.</p>","PeriodicalId":52470,"journal":{"name":"Radioelectronics and Communications Systems","volume":"164 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Penetrating Radiation on Sensitivity of Magnetotransistors\",\"authors\":\"Ivan Vikulin, Oleksandr Nazarenko, Lidiya Vikulina, Pavlo Markolenko\",\"doi\":\"10.3103/s0735272723060055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>An experimental study of the effect of radiation emissions (neutrons, gamma radiation) on the sensitivity of industrial bipolar <i>n-p-n</i> magnetotransistors has been carried out. It has been shown that neutron irradiation leads to defects in the structure, which reduces the effective lifetime of the injected charge carriers and decreases the magnetosensitivity. Gamma radiation with increasing intensity first destroys the surface structural defects and increases the lifetime of carriers and magnetoresponsiveness, and then penetrates deeper forming defects and reducing magnetoresponsiveness. This makes it possible to use gamma radiation with an intensity of up to 10<sup>7</sup> R as a technological method of increasing magnetosensitivity.</p>\",\"PeriodicalId\":52470,\"journal\":{\"name\":\"Radioelectronics and Communications Systems\",\"volume\":\"164 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Radioelectronics and Communications Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3103/s0735272723060055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radioelectronics and Communications Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3103/s0735272723060055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
摘要
摘要 就辐射（中子、伽马辐射）对工业双极 n-p-n 磁晶体管灵敏度的影响进行了实验研究。研究表明，中子辐照会导致结构缺陷，从而缩短注入电荷载流子的有效寿命，降低磁灵敏度。强度不断增加的伽马射线首先会破坏表面结构缺陷，延长载流子的有效寿命并提高磁感应强度，然后会穿透到更深处，形成缺陷并降低磁感应强度。因此，可以使用强度高达 107 R 的伽马射线作为提高磁感应强度的技术方法。
Effect of Penetrating Radiation on Sensitivity of Magnetotransistors
Abstract
An experimental study of the effect of radiation emissions (neutrons, gamma radiation) on the sensitivity of industrial bipolar n-p-n magnetotransistors has been carried out. It has been shown that neutron irradiation leads to defects in the structure, which reduces the effective lifetime of the injected charge carriers and decreases the magnetosensitivity. Gamma radiation with increasing intensity first destroys the surface structural defects and increases the lifetime of carriers and magnetoresponsiveness, and then penetrates deeper forming defects and reducing magnetoresponsiveness. This makes it possible to use gamma radiation with an intensity of up to 107 R as a technological method of increasing magnetosensitivity.
期刊介绍：
Radioelectronics and Communications Systems covers urgent theoretical problems of radio-engineering; results of research efforts, leading experience, which determines directions and development of scientific research in radio engineering and radio electronics; publishes materials of scientific conferences and meetings; information on scientific work in higher educational institutions; newsreel and bibliographic materials. Journal publishes articles in the following sections:Antenna-feeding and microwave devices;Vacuum and gas-discharge devices;Solid-state electronics and integral circuit engineering;Optical radar, communication and information processing systems;Use of computers for research and design of radio-electronic devices and systems;Quantum electronic devices;Design of radio-electronic devices;Radar and radio navigation;Radio engineering devices and systems;Radio engineering theory;Medical radioelectronics.
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