利用二维材料/分子层连接中的量子电容实现新型电子器件功能

Nanomaterials Pub Date : 2024-06-03 DOI:10.3390/nano14110972
Bhartendu Papnai, Ding-Rui Chen, Rapti Ghosh, Zhi-long Yen, Yu-Xiang Chen, Khalil Ur Rehman, Hsin-Yi Tiffany Chen, Ya-Ping Hsieh, Mario Hofmann
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引用次数: 0

摘要

二维(2D)材料通过扩展功能,如器件参数对输入参数的非单调依赖性,有望使电子器件的发展超越摩尔扩展定律。然而,由于依赖原子缺陷和复杂的异质结,负差分电阻(NDR)和反双极行为等效应的稳健性和性能在规模和稳健性方面受到了限制。在本文中,我们介绍了一种利用二维材料和分子层之间结点的量子电容的新型器件概念。我们通过对石墨烯和单层硬脂酸的可扩展集成,实现了可变电容二维分子结(vc2Dmj)二极管。vc2Dmj 即使在室温下也能表现出具有可观峰谷比的 NDR,并具有一个活跃的负阻区域。通过热电测量和 ab initio 计算,确定了这种独特行为的起源是石墨烯和分子层之间的杂化效应。通过形态优化提高器件参数,凸显了我们的方法在实现新功能方面的潜力,从而推动未来电子技术的发展。
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Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality
Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.
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