Differences in coupling between nuclear and electronic energy losses in UO2 with irradiation temperature: An in situ TEM study

To investigate the coupling between nuclear and electronic energy losses in UO₂, we irradiated thin foils with 0.39 MeV Xe and/or 6 MeV Si ions at 93 K using single or simultaneous dual beam ion irradiations. The evolution of perfect dislocation loops was characterized by in situ transmission electron microscopy (TEM). Additional ex situ TEM characterizations at room temperature revealed for the first time in UO₂ the presence of faulted Frank loops too small to be measured during in situ experiments and conventional bright field kinematical imaging conditions.

For the single Xe irradiation, which favor dominant ballistic energy losses, we observed a continuous nucleation of small perfect dislocation loops, which increase in size for our last fluences by growing through mainly coalescence effect. Both the single Si and dual Xe & Si irradiations showed a coupling between nuclear and electronic energy losses, resulting in a significant loop density increase and a tangled line network formation, respectively. These phenomena occur at lower dpa levels, compared to the single Xe irradiation, likely resulting from the thermal spike effect of Si ions. The present results were compared to our previous work at 293 K to investigate the role of irradiation temperature on the energy losses coupling. For the Xe irradiation, the density increases and the loops are smaller at 93 K compared to 293 K, resulting from the uranium interstitials mobility being prevented or allowed. For the Si irradiation, the dislocation evolution kinetics are similar at both temperatures. The electronic excitations effect seems greater than the irradiation temperature effect in this temperature range. For the Xe & Si irradiation, the loop kinetics change resulting in a tangled line network formation is faster and thus the loop transformation into lines occurs at lower dpa levels at 93 K compared to 293 K. It appears that the irradiation temperature affecting the mobility of some small point defects reduces the electronic excitation effect in this case.