封面:纳米级 InGaN 量子结构的光学表征(Adv.)

IF 4.4 Q1 OPTICS Advanced quantum technologies Pub Date : 2024-06-12 DOI:10.1002/qute.202470016
Wai Yuen Fu, Hoi Wai Choi
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引用次数: 0

摘要

在编号为 2300335 的文章中,Wai Yuen Fu 和 Hoi Wai Choi 回顾了表征氮化镓量子阱的纳米光学技术。研究对比了扫描近场光学显微镜(SNOM)和电子显微镜-阴极发光(EM-CL),强调了它们在揭示 InGaN 量子阱的结构和光学特性方面的关键作用。封面图片说明了这些技术的应用,在 GaN/InGaN/GaN 异质结构的原子结构内激发量子阱发光。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Front Cover: Optical Characterization of InGaN Quantum Structures at the Nanoscale (Adv. Quantum Technol. 6/2024)

In article number 2300335, Wai Yuen Fu and Hoi Wai Choi review nano-optical techniques for characterising InGaN quantum wells. The study contrasts scanning near-field optical microscopy (SNOM) with electron microscopy-cathodoluminescence (EM-CL), emphasising their crucial roles in revealing the structural and optical properties of InGaN quantum wells. The cover image illustrates these techniques in action, exciting luminescence from the quantum well within the atomic structure of the GaN/InGaN/GaN heterostructure.

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