{"title":"利用模型优化算法对高纵横比接触孔蚀刻进行精确实用的三维形貌模拟","authors":"Tetsuya Nishizuka, Ryo Igosawa, Takahiro Yokoyama, Kaoru Sako, Hironori Moki, M. Honda","doi":"10.1116/6.0003515","DOIUrl":null,"url":null,"abstract":"High Aspect Ratio Contact (HARC) hole etch is one of the most challenging processes that require many efforts to optimize etch condition. As the aspect ratio increases, novel issues, such as “distortion” and “twisting,” have been highlighted. Since they cause nonaxisymmetric features along the hole axis, it is difficult to understand the etch mechanism correctly, and therefore, taking a 3D profile image is essential to evaluate the exact etch profile. In this study, we created the models for HARC etch with a cell-based Particle Monte Carlo topography simulator by fitting both vertical and horizontal cross-sectional profiles carefully to the experimental results. Moreover, we attempted to apply a model optimization algorithm. By collaboration of human and the algorithm, modeling engineers can minimize a try-and-error approach, and a precise 3D simulation model can be created much faster than before. As a result, the distortion and twisting profiles were reproduced very well on the simulator, and thus, it is expected that the simulator can be utilized as a practical tool for an assistance of process optimization.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"109 51","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Precise and practical 3D topography simulation of high aspect ratio contact hole etch by using model optimization algorithm\",\"authors\":\"Tetsuya Nishizuka, Ryo Igosawa, Takahiro Yokoyama, Kaoru Sako, Hironori Moki, M. Honda\",\"doi\":\"10.1116/6.0003515\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High Aspect Ratio Contact (HARC) hole etch is one of the most challenging processes that require many efforts to optimize etch condition. As the aspect ratio increases, novel issues, such as “distortion” and “twisting,” have been highlighted. Since they cause nonaxisymmetric features along the hole axis, it is difficult to understand the etch mechanism correctly, and therefore, taking a 3D profile image is essential to evaluate the exact etch profile. In this study, we created the models for HARC etch with a cell-based Particle Monte Carlo topography simulator by fitting both vertical and horizontal cross-sectional profiles carefully to the experimental results. Moreover, we attempted to apply a model optimization algorithm. By collaboration of human and the algorithm, modeling engineers can minimize a try-and-error approach, and a precise 3D simulation model can be created much faster than before. As a result, the distortion and twisting profiles were reproduced very well on the simulator, and thus, it is expected that the simulator can be utilized as a practical tool for an assistance of process optimization.\",\"PeriodicalId\":170900,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology A\",\"volume\":\"109 51\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology A\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003515\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003515","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
高纵横比接触(HARC)孔蚀刻是最具挑战性的工艺之一,需要付出许多努力来优化蚀刻条件。随着高宽比的增加,"变形 "和 "扭曲 "等新问题凸显出来。由于它们会导致沿孔轴线的非轴对称特征,因此很难正确理解蚀刻机制,因此,拍摄三维剖面图像对于评估准确的蚀刻剖面至关重要。在本研究中,我们使用基于单元的粒子蒙特卡洛形貌模拟器创建了 HARC 刻蚀模型,将垂直和水平截面轮廓与实验结果进行了仔细拟合。此外,我们还尝试应用模型优化算法。通过人与算法的协作,建模工程师可以最大限度地减少试错方法,比以前更快地创建精确的三维仿真模型。结果,模拟器很好地再现了变形和扭曲轮廓,因此,该模拟器有望成为协助工艺优化的实用工具。
Precise and practical 3D topography simulation of high aspect ratio contact hole etch by using model optimization algorithm
High Aspect Ratio Contact (HARC) hole etch is one of the most challenging processes that require many efforts to optimize etch condition. As the aspect ratio increases, novel issues, such as “distortion” and “twisting,” have been highlighted. Since they cause nonaxisymmetric features along the hole axis, it is difficult to understand the etch mechanism correctly, and therefore, taking a 3D profile image is essential to evaluate the exact etch profile. In this study, we created the models for HARC etch with a cell-based Particle Monte Carlo topography simulator by fitting both vertical and horizontal cross-sectional profiles carefully to the experimental results. Moreover, we attempted to apply a model optimization algorithm. By collaboration of human and the algorithm, modeling engineers can minimize a try-and-error approach, and a precise 3D simulation model can be created much faster than before. As a result, the distortion and twisting profiles were reproduced very well on the simulator, and thus, it is expected that the simulator can be utilized as a practical tool for an assistance of process optimization.