通过氯化钠辅助低压化学气相沉积实现 WS2 从树枝状生长到三角形生长的转变

H. Pokhrel, Joseph Anthony Duncan, Bryson Krause, T. B. Hoang, S. D. Pollard
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摘要

二硫化钨(WS2)具有卓越的光学、电子和电催化性能,是一种前景广阔的二维材料。然而,这种材料的形态会随着生长条件的不同而发生显著变化。在这项研究中,我们使用盐辅助低压化学气相沉积(LP-CVD)技术,在二氧化硅/硅基底上生长出几层大小超过 50 μm 的 WS2 晶体。通过系统地改变氯化钠促进剂材料的用量以及低氯化钠用量时中间 Wx+ 状态的存在,我们观察到了从大型树枝状生长到三角形生长的过渡。在扩散受限聚集的背景下讨论了从树枝状生长到三角形生长的转变,这种转变很可能是形成能量降低的结果,因为在给定前驱体数量的情况下,过渡金属氧卤化物的浓度不断增加。这些结果有助于澄清氯化钠前驱体在盐辅助 LP-CVD 的 WS2 中的作用,并为调整这种材料的形态提供了一种新方法。
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Transformation from dendritic to triangular growth of WS2 via NaCl assisted low-pressure chemical vapor deposition
Tungsten disulfide (WS2) is a promising two-dimensional material owing to its remarkable optical, electronic, and electrocatalytic behavior. However, morphology of this material varies significantly with growth conditions. In this work, we use salt-assisted low-pressure chemical vapor deposition (LP-CVD) to grow WS2 crystals of a few layers reaching over 50 μm in size on SiO2/Si substrates. We observe a transition from large, dendritic to triangular growth by systematically varying the amount of the NaCl promotor material as well as the presence of intermediate Wx+ states for low NaCl amounts. The transition from dendritic to triangular growth is discussed in the context of diffusion limited aggregation, with the transformation likely being the result of reduced formation energy, owing to increasing concentrations of transition metal oxyhalides for given precursor quantities. These results help to clarify the role of effects of the NaCl precursor in salt-assisted LP-CVD of WS2 and provide a new means to tune the morphology of this material.
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