{"title":"作为二氧化钛薄膜敏化剂的三元金属钙源 HgBi2S3 纳米粒子:SILAR 合成与表征","authors":"Sachin Padwal, Rahul Wagh, Jivan Thakare, Rajendra Patil","doi":"10.1007/s12034-024-03198-0","DOIUrl":null,"url":null,"abstract":"<p>The compound, mercury bismuth sulphide (HgBi<sub>2</sub>S<sub>3</sub>), represents a promising semiconductor within the II–V–VI group, demonstrating potential as a solar cell absorber layer. However, its synthesis and investigation through the successive ionic layer adsorption and reaction (SILAR) method have remained unexplored. This study focuses on the successful synthesis of HgBi<sub>2</sub>S<sub>3</sub> nanoparticles using the SILAR technique atop wide band gap n-type semiconducting titanium dioxide (TiO<sub>2</sub>) thin films. Characterization via X-ray diffraction (XRD) confirmed the synthesis, revealing an average crystallite size of 93.83 nm. The lattice strain percentage was measured at 0.1467 with a dislocation density of 1.13 × 10<sup>−4</sup> 1/nm<sup>2</sup>. Scanning electron microscopy (SEM) analysis showcased the spherical morphology of the nanoparticles, exhibiting average sizes of 169, 238 and 329 nm corresponding to 5, 10 and 15 SILAR cycles, respectively. The thickness of the TiO<sub>2</sub>/HgBi<sub>2</sub>S<sub>3</sub> composite thin film ranged from 12 to 18 µm. Notably, sensitizing the TiO<sub>2</sub> film with HgBi<sub>2</sub>S<sub>3</sub> nanoparticles resulted in a substantial reduction in the contact angle by ~24°. Optical studies demonstrated a significant decrease in the energy band gap of TiO<sub>2</sub> from 3.06 to 1.6 eV post-sensitization with HgBi<sub>2</sub>S<sub>3</sub> nanoparticles, indicating enhanced light absorption capabilities. Interestingly, the energy band gap of the TiO<sub>2</sub>/HgBi<sub>2</sub>S<sub>3</sub> composite thin film remained consistent across different SILAR cycles. Moreover, electrochemical impedance spectroscopy and photoelectrochemical analyses revealed the intriguing performance characteristics of the TiO<sub>2</sub>/HgBi<sub>2</sub>S<sub>3</sub> composite thin film, showcasing promising yet marginal enhancements.</p>","PeriodicalId":502,"journal":{"name":"Bulletin of Materials Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Triadic metal chalcogen HgBi2S3 nanoparticles as sensitizers for TiO2 thin film: SILAR synthesis and characterization\",\"authors\":\"Sachin Padwal, Rahul Wagh, Jivan Thakare, Rajendra Patil\",\"doi\":\"10.1007/s12034-024-03198-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The compound, mercury bismuth sulphide (HgBi<sub>2</sub>S<sub>3</sub>), represents a promising semiconductor within the II–V–VI group, demonstrating potential as a solar cell absorber layer. However, its synthesis and investigation through the successive ionic layer adsorption and reaction (SILAR) method have remained unexplored. This study focuses on the successful synthesis of HgBi<sub>2</sub>S<sub>3</sub> nanoparticles using the SILAR technique atop wide band gap n-type semiconducting titanium dioxide (TiO<sub>2</sub>) thin films. Characterization via X-ray diffraction (XRD) confirmed the synthesis, revealing an average crystallite size of 93.83 nm. The lattice strain percentage was measured at 0.1467 with a dislocation density of 1.13 × 10<sup>−4</sup> 1/nm<sup>2</sup>. Scanning electron microscopy (SEM) analysis showcased the spherical morphology of the nanoparticles, exhibiting average sizes of 169, 238 and 329 nm corresponding to 5, 10 and 15 SILAR cycles, respectively. The thickness of the TiO<sub>2</sub>/HgBi<sub>2</sub>S<sub>3</sub> composite thin film ranged from 12 to 18 µm. Notably, sensitizing the TiO<sub>2</sub> film with HgBi<sub>2</sub>S<sub>3</sub> nanoparticles resulted in a substantial reduction in the contact angle by ~24°. Optical studies demonstrated a significant decrease in the energy band gap of TiO<sub>2</sub> from 3.06 to 1.6 eV post-sensitization with HgBi<sub>2</sub>S<sub>3</sub> nanoparticles, indicating enhanced light absorption capabilities. Interestingly, the energy band gap of the TiO<sub>2</sub>/HgBi<sub>2</sub>S<sub>3</sub> composite thin film remained consistent across different SILAR cycles. Moreover, electrochemical impedance spectroscopy and photoelectrochemical analyses revealed the intriguing performance characteristics of the TiO<sub>2</sub>/HgBi<sub>2</sub>S<sub>3</sub> composite thin film, showcasing promising yet marginal enhancements.</p>\",\"PeriodicalId\":502,\"journal\":{\"name\":\"Bulletin of Materials Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bulletin of Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1007/s12034-024-03198-0\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s12034-024-03198-0","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Triadic metal chalcogen HgBi2S3 nanoparticles as sensitizers for TiO2 thin film: SILAR synthesis and characterization
The compound, mercury bismuth sulphide (HgBi2S3), represents a promising semiconductor within the II–V–VI group, demonstrating potential as a solar cell absorber layer. However, its synthesis and investigation through the successive ionic layer adsorption and reaction (SILAR) method have remained unexplored. This study focuses on the successful synthesis of HgBi2S3 nanoparticles using the SILAR technique atop wide band gap n-type semiconducting titanium dioxide (TiO2) thin films. Characterization via X-ray diffraction (XRD) confirmed the synthesis, revealing an average crystallite size of 93.83 nm. The lattice strain percentage was measured at 0.1467 with a dislocation density of 1.13 × 10−4 1/nm2. Scanning electron microscopy (SEM) analysis showcased the spherical morphology of the nanoparticles, exhibiting average sizes of 169, 238 and 329 nm corresponding to 5, 10 and 15 SILAR cycles, respectively. The thickness of the TiO2/HgBi2S3 composite thin film ranged from 12 to 18 µm. Notably, sensitizing the TiO2 film with HgBi2S3 nanoparticles resulted in a substantial reduction in the contact angle by ~24°. Optical studies demonstrated a significant decrease in the energy band gap of TiO2 from 3.06 to 1.6 eV post-sensitization with HgBi2S3 nanoparticles, indicating enhanced light absorption capabilities. Interestingly, the energy band gap of the TiO2/HgBi2S3 composite thin film remained consistent across different SILAR cycles. Moreover, electrochemical impedance spectroscopy and photoelectrochemical analyses revealed the intriguing performance characteristics of the TiO2/HgBi2S3 composite thin film, showcasing promising yet marginal enhancements.
期刊介绍:
The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.