N. N. Bragin, V. N. Svetogorov, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Ivanov, M. A. Ladugin
{"title":"高功率单向移动载流子 InGaAs/InP 光电二极管的特点","authors":"N. N. Bragin, V. N. Svetogorov, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Ivanov, M. A. Ladugin","doi":"10.3103/S1068335624600542","DOIUrl":null,"url":null,"abstract":"<p>A comparison is made of conventional pin photodetectors and modern uni-traveling-carrier photodetectors based on InGaAs/InP heterostructures. The differences in the designs of heterostructures of these photodetectors are considered and the resulting features of their functioning are analyzed. It is shown that with comparable photosensitivity, the saturation photocurrent of uni-traveling-carrier photodetectors is approximately four times greater than that in conventional pin photodetectors. Devices with a photosensitive area 40 μm in diameter reach the saturation current at an input optical power of 10–12 and 60–70 mW for pin and uni-traveling-carrier photodetectors, respectively (reverse bias voltage of 5 V).</p>","PeriodicalId":503,"journal":{"name":"Bulletin of the Lebedev Physics Institute","volume":"51 2 supplement","pages":"S180 - S184"},"PeriodicalIF":0.6000,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Features of High-Power Uni-Traveling-Carrier InGaAs/InP Photodiodes\",\"authors\":\"N. N. Bragin, V. N. Svetogorov, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Ivanov, M. A. Ladugin\",\"doi\":\"10.3103/S1068335624600542\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>A comparison is made of conventional pin photodetectors and modern uni-traveling-carrier photodetectors based on InGaAs/InP heterostructures. The differences in the designs of heterostructures of these photodetectors are considered and the resulting features of their functioning are analyzed. It is shown that with comparable photosensitivity, the saturation photocurrent of uni-traveling-carrier photodetectors is approximately four times greater than that in conventional pin photodetectors. Devices with a photosensitive area 40 μm in diameter reach the saturation current at an input optical power of 10–12 and 60–70 mW for pin and uni-traveling-carrier photodetectors, respectively (reverse bias voltage of 5 V).</p>\",\"PeriodicalId\":503,\"journal\":{\"name\":\"Bulletin of the Lebedev Physics Institute\",\"volume\":\"51 2 supplement\",\"pages\":\"S180 - S184\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bulletin of the Lebedev Physics Institute\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.3103/S1068335624600542\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of the Lebedev Physics Institute","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.3103/S1068335624600542","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Features of High-Power Uni-Traveling-Carrier InGaAs/InP Photodiodes
A comparison is made of conventional pin photodetectors and modern uni-traveling-carrier photodetectors based on InGaAs/InP heterostructures. The differences in the designs of heterostructures of these photodetectors are considered and the resulting features of their functioning are analyzed. It is shown that with comparable photosensitivity, the saturation photocurrent of uni-traveling-carrier photodetectors is approximately four times greater than that in conventional pin photodetectors. Devices with a photosensitive area 40 μm in diameter reach the saturation current at an input optical power of 10–12 and 60–70 mW for pin and uni-traveling-carrier photodetectors, respectively (reverse bias voltage of 5 V).
期刊介绍：
Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.
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