硅和蓝宝石衬底上的碲化镉薄膜：热气相沉积和结构表征

IF 0.6 4区材料科学 Q4 CRYSTALLOGRAPHY Crystallography Reports Pub Date : 2024-06-06 DOI:10.1134/S1063774524600030

I. O. Koshelev, I. S. Volchkov, P. L. Podkur, D. R. Khairetdinova, I. M. Doludenko, V. M. Kanevsky

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引用次数: 0

摘要

摘要通过热气相沉积法在 Si(111) 和 Al2O3(0001) 基质上生长了碲化镉薄膜。通过原子力显微镜、扫描电子显微镜和 X 射线衍射分析对获得的薄膜进行了研究。研究发现，在 Al2O3（0001）基底上可以生长出钨碲和闪锌矿碲化镉改性薄膜。在硅基底上可以获得闪锌矿碲化镉改性薄膜。研究表明，薄膜的元素组成接近于化学计量，而在 Al2O3(0001) 上生长的薄膜，元素组成偏差不超过 1%。

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Textured CdTe Thin Films on Silicon and Sapphire Substrates: Thermal Vapor Deposition and Structural Characterization

CdTe thin films were grown on Si(111) and Al₂O₃(0001) substrates by thermal vapor deposition. The obtained films were studied by atomic-force and scanning electron microscopy, as well as by X-ray diffraction analysis. It was found that thin films of both wurtzite and sphalerite CdTe modifications can be grown on Al₂O₃(0001) substrates. Thin films of the sphalerite CdTe modification can be obtained on Si substrates. It was shown that the elemental composition of thin films is close to stoichiometry, and, in the case of thin films grown on Al₂O₃(0001), the deviation was no more than 1 at %.

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来源期刊

Crystallography Reports 化学-晶体学

CiteScore

1.10

自引率

28.60%

发文量

审稿时长

4-8 weeks

期刊介绍： Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.