Daniel. A. Hunter, Gunasekar Naresh‐Kumar, Paul R. Edwards, Olha Makydonska, Fabien C. P. Massabuau, Isa Hatipoglu, Partha Mukhopadhyay, Winston V. Schoenfeld, Robert W. Martin
{"title":"不同基底上的氧化锡镓外延层：光学和成分分析","authors":"Daniel. A. Hunter, Gunasekar Naresh‐Kumar, Paul R. Edwards, Olha Makydonska, Fabien C. P. Massabuau, Isa Hatipoglu, Partha Mukhopadhyay, Winston V. Schoenfeld, Robert W. Martin","doi":"10.1002/pssb.202400137","DOIUrl":null,"url":null,"abstract":"Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(Sn<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) with alloy concentrations varying up to an <jats:italic>x</jats:italic> value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (<jats:italic>V</jats:italic><jats:sub>Ga</jats:sub>) and subsequent <jats:italic>V</jats:italic><jats:sub>Ga</jats:sub>–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":"20 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tin Gallium Oxide Epilayers on Different Substrates: Optical and Compositional Analysis\",\"authors\":\"Daniel. A. Hunter, Gunasekar Naresh‐Kumar, Paul R. Edwards, Olha Makydonska, Fabien C. P. Massabuau, Isa Hatipoglu, Partha Mukhopadhyay, Winston V. Schoenfeld, Robert W. Martin\",\"doi\":\"10.1002/pssb.202400137\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(Sn<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) with alloy concentrations varying up to an <jats:italic>x</jats:italic> value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (<jats:italic>V</jats:italic><jats:sub>Ga</jats:sub>) and subsequent <jats:italic>V</jats:italic><jats:sub>Ga</jats:sub>–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.\",\"PeriodicalId\":20406,\"journal\":{\"name\":\"Physica Status Solidi B-basic Solid State Physics\",\"volume\":\"20 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi B-basic Solid State Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1002/pssb.202400137\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi B-basic Solid State Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssb.202400137","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Tin Gallium Oxide Epilayers on Different Substrates: Optical and Compositional Analysis
Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(SnxGa1−x)2O3] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga2O3) with alloy concentrations varying up to an x value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (VGa) and subsequent VGa–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga2O3, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.
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physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions.
physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.
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