{"title":"低温条件下 60Co 伽马辐射对 N 沟道 MOSFETS 造成的损伤研究。","authors":"Arshiya Anjum, Darshan Muddubasavanna, Pushpa Nagaraj, Gnana Prakash Akkanagowda Patel","doi":"10.1093/rpd/ncae013","DOIUrl":null,"url":null,"abstract":"<p><p>N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 60Co gamma radiation in the dose range of 100 krad to 6 Mrad at cryogenic (77 K) and room temperatures (300 K). The MOS devices irradiated at 77 K and 300 K were characterized at 77 K and 300 K respectively. The different electrical parameters of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot) and mobility of the charge carriers (μ) were studied as a function of total dose. A considerable increase in ΔNit and ΔNot and decrease in Vth was observed after irradiation. The 77 K irradiation results were then compared with 300 K irradiation results and found that the degradation in the electrical characteristics is more for the devices irradiated at 300 K.</p>","PeriodicalId":20795,"journal":{"name":"Radiation protection dosimetry","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An investigation of 60Co gamma radiation induced damage in N-channel MOSFETS at cryogenic temperature.\",\"authors\":\"Arshiya Anjum, Darshan Muddubasavanna, Pushpa Nagaraj, Gnana Prakash Akkanagowda Patel\",\"doi\":\"10.1093/rpd/ncae013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 60Co gamma radiation in the dose range of 100 krad to 6 Mrad at cryogenic (77 K) and room temperatures (300 K). The MOS devices irradiated at 77 K and 300 K were characterized at 77 K and 300 K respectively. The different electrical parameters of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot) and mobility of the charge carriers (μ) were studied as a function of total dose. A considerable increase in ΔNit and ΔNot and decrease in Vth was observed after irradiation. The 77 K irradiation results were then compared with 300 K irradiation results and found that the degradation in the electrical characteristics is more for the devices irradiated at 300 K.</p>\",\"PeriodicalId\":20795,\"journal\":{\"name\":\"Radiation protection dosimetry\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2024-07-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Radiation protection dosimetry\",\"FirstCategoryId\":\"93\",\"ListUrlMain\":\"https://doi.org/10.1093/rpd/ncae013\",\"RegionNum\":4,\"RegionCategory\":\"环境科学与生态学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENVIRONMENTAL SCIENCES\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation protection dosimetry","FirstCategoryId":"93","ListUrlMain":"https://doi.org/10.1093/rpd/ncae013","RegionNum":4,"RegionCategory":"环境科学与生态学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENVIRONMENTAL SCIENCES","Score":null,"Total":0}
引用次数: 0
摘要
在低温(77 K)和室温(300 K)下,用 60Co 伽马射线辐照 N 沟道耗尽型金属氧化物半导体场效应晶体管(MOSFET),辐照剂量范围为 100 krad 至 6 Mrad。在 77 K 和 300 K 温度下辐照的 MOS 器件分别进行了表征。研究了 MOSFET 的不同电气参数,如阈值电压(Vth)、界面俘获电荷密度(ΔNit)、氧化物俘获电荷密度(ΔNot)和电荷载流子迁移率(μ)与总剂量的函数关系。辐照后观察到 ΔNit 和 ΔNot 显著增加,Vth 下降。然后将 77 K 的辐照结果与 300 K 的辐照结果进行比较,发现在 300 K 下辐照的器件的电气特性退化程度更大。
An investigation of 60Co gamma radiation induced damage in N-channel MOSFETS at cryogenic temperature.
N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 60Co gamma radiation in the dose range of 100 krad to 6 Mrad at cryogenic (77 K) and room temperatures (300 K). The MOS devices irradiated at 77 K and 300 K were characterized at 77 K and 300 K respectively. The different electrical parameters of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot) and mobility of the charge carriers (μ) were studied as a function of total dose. A considerable increase in ΔNit and ΔNot and decrease in Vth was observed after irradiation. The 77 K irradiation results were then compared with 300 K irradiation results and found that the degradation in the electrical characteristics is more for the devices irradiated at 300 K.
期刊介绍:
Radiation Protection Dosimetry covers all aspects of personal and environmental dosimetry and monitoring, for both ionising and non-ionising radiations. This includes biological aspects, physical concepts, biophysical dosimetry, external and internal personal dosimetry and monitoring, environmental and workplace monitoring, accident dosimetry, and dosimetry related to the protection of patients. Particular emphasis is placed on papers covering the fundamentals of dosimetry; units, radiation quantities and conversion factors. Papers covering archaeological dating are included only if the fundamental measurement method or technique, such as thermoluminescence, has direct application to personal dosimetry measurements. Papers covering the dosimetric aspects of radon or other naturally occurring radioactive materials and low level radiation are included. Animal experiments and ecological sample measurements are not included unless there is a significant relevant content reason.