具有硫掺杂和氧空位协同效应的 MoO3:掺硫对结构、形态和光电特性的影响

Nanomaterials Pub Date : 2024-07-12 DOI:10.3390/nano14141189
Jian Yu, Zhaokang Zheng, Aiwu Wang, Muhammad Humayun, Y. A. Attia
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引用次数: 0

摘要

三氧化钼(MoO3)是一种极具吸引力的半导体。因此,针对光电子应用的带隙工程很有吸引力,但却没有得到很好的研究。在此,我们报告了利用硫磺粉作为硫源,通过自主开发的水热合成方法在 MoO3 中加入硫原子的情况。傅立叶变换红外光谱(FTIR)、X 射线光电子能谱(XPS)和电子顺磁共振(EPR)证实,在硫掺杂和氧空位的协同作用下,MoO3 材料中形成了 Mo-S 键(命名为 S-MoO3-x)。UV-VIS DRS 光谱证实,掺硫后带隙从 2.68 eV 调整到 2.57 eV。通过参考光致发光(PL)光谱和电化学阻抗光谱(EIS),可以确定掺硫后出现了一些 MoS2 相,从而显著提高了电荷载流子分离和电子转移效率。因此,制备的 S-MoO3-x 具有灵敏的光电流响应和出色的循环稳定性。这项关于硫掺杂和氧空位协同效应的研究为了解掺杂策略对 MoO3 性能的影响提供了重要启示,为其在相关领域的优化和发展铺平了新的道路。
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MoO3 with the Synergistic Effect of Sulfur Doping and Oxygen Vacancies: The Influence of S Doping on the Structure, Morphology, and Optoelectronic Properties
Molybdenum trioxide (MoO3) is an attractive semiconductor. Thus, bandgap engineering toward photoelectronic applications is appealing yet not well studied. Here, we report the incorporation of sulfur atoms into MoO3, using sulfur powder as a source of sulfur, via a self-developed hydrothermal synthesis approach. The formation of Mo-S bonds in the MoO3 material with the synergistic effect of sulfur doping and oxygen vacancies (designated as S-MoO3−x) is confirmed using Fourier-transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and electron paramagnetic resonance (EPR). The bandgap is tuned from 2.68 eV to 2.57 eV upon sulfur doping, as confirmed by UV-VIS DRS spectra. Some MoS2 phase is identified with sulfur doping by referring to the photoluminescence (PL) spectra and electrochemical impedance spectroscopy (EIS), allowing significantly improved charge carrier separation and electron transfer efficiency. Therefore, the as-prepared S-MoO3−x delivers a sensitive photocurrent response and splendid cycling stability. This study on the synergistic effect of sulfur doping and oxygen vacancies provides key insights into the impact of doping strategies on MoO3 performance, paving new pathways for its optimization and development in relevant fields.
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