Ling Luo, Nengtao Wu, Zhiheng Xing, Shanjie Li, Fanyin Zeng, Ben Cao, Changtong Wu, Guoqiang Li
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引用次数: 0
摘要
本文设计并实验演示了一种具有高击穿电压和低导通电阻的耗尽型氮化镓高电子迁移率晶体管(GaN HEMTs)。它结合了栅极场板和部分 u-GaN 盖层(栅极场板和部分 u-GaN 盖层 HEMTs:GPU-HEMTs)来共同调节表面电场分布,从而使电场峰值远离栅极边缘,从而提高了击穿电压并降低了导通电阻。优化后的 GPU-HEMT 输出电流(I DS)更大,达到 495 mA/mm,导通电阻相应更小,为 4.26 mΩ-cm2。同时,与传统 GaN HEMT 的 633 V 击穿电压相比,在 I DS = 1 mA/mm 时可获得 1044 V 的高击穿电压。这种方法在同时优化氮化镓 HEMT 的击穿电压和特定导通电阻方面非常有效,同时还能保持较大的输出电流。
Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field
In this letter, a depletion-mode GaN high-electron mobility transistors (GaN HEMTs) with high breakdown voltage and low on-resistance are designed and experimentally demonstrated. It combines the gate field plate and partial u-GaN cap layer (Gate Field Plate and Partial u-GaN Cap HEMTs: GPU-HEMTs) to co-modulate the surface electric field distribution, which results in the electric field peak being far away from the gate edge, thus improving the breakdown voltage and decreasing the on-resistance. The optimized GPU-HEMTs exhibit a larger output current (I
DS) of 495 mA/mm and a correspondingly smaller specific on-resistance of 4.26 mΩ·cm2. Meanwhile, a high breakdown voltage of 1044 V at I
DS = 1 mA/mm compared to the conventional GaN HEMTs of 633 V was obtained. This approach is highly effective in simultaneously optimizing the breakdown voltage and the specific on-resistance of GaN HEMTs, while maintaining a large output current.