单晶氮化铝的干法和湿法蚀刻

Hsiao-Hsuan Wan, Chiao-Ching Chiang, Jian-Sian Li, N. Al-Mamun, Aman Haque, Fan Ren, S. Pearton
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摘要

在 Cl2/Ar 或 Cl2/Ar/CHF3 的电感耦合等离子体中,研究了通过金属有机化学气相沉积生长的高晶体质量 c 平面 AlN 的干蚀刻与源和夹头功率的函数关系。在 Cl2/Ar/CHF3 中,蚀刻后的表面具有与 F 有关的残留物,这些残留物可在 NH4OH 溶液中去除。在 KOH 或 H3PO4 液体配方中,铝极性基底面的蚀刻速度都很慢,同时会形成大量与位错有关的六边形蚀刻坑。在这些凹坑中,KOH 或 H3PO4 基湿法蚀刻率的活化能分别为 124 和 183 kJ/mol,这表明蚀刻是受反应限制的。
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Dry and wet etching of single-crystal AlN
The dry etching of high crystal quality c-plane AlN grown by metal organic chemical vapor deposition was examined as a function of source and chuck power in inductively coupled plasmas of Cl2/Ar or Cl2/Ar/CHF3. Maximum etch rates of ∼1500 Å min−1 were obtained at high powers, with selectivity over SiO2 up to 3. The as-etched surfaces in Cl2/Ar/CHF3 have F-related residues, which can be removed in NH4OH solutions. The Al-polar basal plane was found to etch slowly in either KOH or H3PO4 liquid formulations with extensive formation of hexagonal etch pits related to dislocations. The activation energies for KOH- or H3PO4-based wet etching rates within these pits were 124 and 183 kJ/mol, respectively, which are indicative of reaction-limited etching.
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