{"title":"新型 PANI-PPy--GO-MWCNTs 复合结构/MnO2/Fe3O4/n-Si 结构的电学和介电性能研究","authors":"A. Ashery, Samia Gad","doi":"10.1149/2162-8777/ad6032","DOIUrl":null,"url":null,"abstract":"\n We investigated here the electrical properties of the novel structure of PANI-PPy-GO-MWCNTs composite/MnO2/Fe3O4/n-Si. This structure has not been addressed in literature before, the manufacture of this novel structure is carried out using a simple technique. So, we introduce here a novel structure with a simple method of manufacture. The imaginary part of modulus M՝՝ has two behaviors, the first behavior at high and low frequency and the second behavior at mid frequency, so the M՝՝ gives two contrarian behaviors, The M՝՝ is a strong function of frequency and we can change the behavior of M՝՝ by change of frequencies. The Col – Col diagram of modulus has ideal figures at some voltages including two semicircles of grains and grain boundaries. The imaginary part of impedance Z՝՝ versus frequency creates peaks, the peaks shift toward the low frequencies. The novel here the Z՝՝ has positive and negative values, despite the Z՝՝ should have negative values only. The real part of impedance Z՝ keeps on without change at high frequencies and splits for all temperatures at low and mid frequencies. Some electrical properties such as barrier height ɸb,Wd the width of the depletion layer, Nss the density of states,","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of Electrical and Dielectrically Properties of a Novel Structure of PANI-PPy--GO-MWCNTs Composite/MnO2/Fe3O4/n-Si Structure\",\"authors\":\"A. Ashery, Samia Gad\",\"doi\":\"10.1149/2162-8777/ad6032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n We investigated here the electrical properties of the novel structure of PANI-PPy-GO-MWCNTs composite/MnO2/Fe3O4/n-Si. This structure has not been addressed in literature before, the manufacture of this novel structure is carried out using a simple technique. So, we introduce here a novel structure with a simple method of manufacture. The imaginary part of modulus M՝՝ has two behaviors, the first behavior at high and low frequency and the second behavior at mid frequency, so the M՝՝ gives two contrarian behaviors, The M՝՝ is a strong function of frequency and we can change the behavior of M՝՝ by change of frequencies. The Col – Col diagram of modulus has ideal figures at some voltages including two semicircles of grains and grain boundaries. The imaginary part of impedance Z՝՝ versus frequency creates peaks, the peaks shift toward the low frequencies. The novel here the Z՝՝ has positive and negative values, despite the Z՝՝ should have negative values only. The real part of impedance Z՝ keeps on without change at high frequencies and splits for all temperatures at low and mid frequencies. Some electrical properties such as barrier height ɸb,Wd the width of the depletion layer, Nss the density of states,\",\"PeriodicalId\":11496,\"journal\":{\"name\":\"ECS Journal of Solid State Science and Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Journal of Solid State Science and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1149/2162-8777/ad6032\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad6032","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
我们在此研究了 PANI-PPy-GO-MWCNTs 复合材料/MnO2/Fe3O4/n-Si 新型结构的电气性能。这种结构以前从未在文献中出现过,这种新型结构的制造采用了一种简单的技术。因此,我们在此介绍一种制造方法简单的新型结构。模量 M՝՝的虚部有两种行为,第一种行为发生在高频和低频,第二种行为发生在中频,因此 M՝՝有两种相反的行为,M՝՝是频率的强函数,我们可以通过改变频率来改变 M՝՝的行为。模量的 Col - Col 图在某些电压下具有理想的图形,包括晶粒和晶界的两个半圆。阻抗 Z՝՝的虚部与频率的关系产生峰值,峰值向低频移动。尽管 Z՝՝ 应该只有负值,但这里的新颖之处在于 Z՝՝ 有正值和负值。阻抗的实部 Z՝在高频时保持不变,而在中低频时则在所有温度下分裂。一些电气特性,如势垒高度ɸb、耗尽层宽度 Wd 和状态密度 Nss、
Investigation of Electrical and Dielectrically Properties of a Novel Structure of PANI-PPy--GO-MWCNTs Composite/MnO2/Fe3O4/n-Si Structure
We investigated here the electrical properties of the novel structure of PANI-PPy-GO-MWCNTs composite/MnO2/Fe3O4/n-Si. This structure has not been addressed in literature before, the manufacture of this novel structure is carried out using a simple technique. So, we introduce here a novel structure with a simple method of manufacture. The imaginary part of modulus M՝՝ has two behaviors, the first behavior at high and low frequency and the second behavior at mid frequency, so the M՝՝ gives two contrarian behaviors, The M՝՝ is a strong function of frequency and we can change the behavior of M՝՝ by change of frequencies. The Col – Col diagram of modulus has ideal figures at some voltages including two semicircles of grains and grain boundaries. The imaginary part of impedance Z՝՝ versus frequency creates peaks, the peaks shift toward the low frequencies. The novel here the Z՝՝ has positive and negative values, despite the Z՝՝ should have negative values only. The real part of impedance Z՝ keeps on without change at high frequencies and splits for all temperatures at low and mid frequencies. Some electrical properties such as barrier height ɸb,Wd the width of the depletion layer, Nss the density of states,
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.