利用喷雾热解沉积的无机和绿叶掺杂斯诺薄膜的光学和结构特性的合成与表征

C. N Ukwu, J. E Ekpe, A. N Nwachukwu, E. P Obot, O. C Okafor, T. O Daniel, J. C Umunna, P. B Otah, B. J Robert, C. A Elekwa, B. J Ifeanyichukwu
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引用次数: 0

摘要

采用喷雾热解法在玻璃基底上沉积了染料敏化纳米杂化 ZnxSnyOz 薄膜。使用的染料提取物来自柚子叶。 Zn2+ 的浓度分别为 0.1M 和 1%。在 50oC、100oC 和 150oC 的不同基底温度下进行沉积。研究和分析了 Zn2+ 离子和柚木叶染料提取物对薄膜的光学和固态特性的影响。结果表明,未掺杂氧化锡薄膜在不同基底温度下的吸光度约为 0.1-0.7。吸光度一般随沉积/基底温度的升高而增加,在 150 摄氏度下沉积的薄膜吸光度最大。在 350 纳米波长处,未掺杂和掺杂 Zn2+ 的氧化锡薄膜的平均透射率都在 90% 以上,与薄膜厚度无关。掺杂染料的样品在 625 纳米波长处的透光率有所提高。所有薄膜的反射光谱都呈现出类似的趋势。未掺杂和掺杂 Zn2+ 的氧化锡薄膜样品在 350 纳米波长处观察到峰值反射率,而掺杂染料的样品在 625 纳米波长处观察到峰值反射率。此外,还观察到掺杂染料的样品的带隙比掺杂 Zn2+ 的样品低:1.55eV-1.83eV:1.60eV - 2.20eV。这表明染料的加入移动了未掺杂氧化锡薄膜的基本吸收边,从而为器件应用提供了带隙调谐效应。与未掺杂的氧化锡样品相比,无论掺杂浓度如何,所有掺杂锌的氧化锡样品的衍射图都具有强度相对较低的特点。显然,掺入 1%染料提取物的氧化锡改变了未掺杂氧化锡样品的 XRD 图。基底温度也影响了氧化锡:染料样品的结构特性,表明随着基底温度的升高,薄膜的结晶度强度增加。结果同样表明,晶粒尺寸增大导致样品的能量坏隙减小。
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Synthesis And Characterization Of Optical And Structural Properties Of Inorganic And Green Leaf Doped Sno Thin Films Deposited Using Spray Pyrolysis
Dye-sensitized Nanohybrid ZnxSnyOz thin films were deposited on glass substrates using spray pyrolysis method. The dye extract from the leaves of tectona grandis was used.  A concentration of 0.1M of Zn2+ and 1% was used respectively. Depositions were carried out at different substrate temperature of 50oC, 100oC, and 150oC. The effect Zn2+ ion and dye extract from tectona grandis leaves on optical and solid state properties of the films were examined and analysed. The result showed that the absorbance of the undoped SnO thin films at various substrate temperatures vary from about 0.1-0.7. The absorbance generally increased with deposition/ substrate temperature exhibiting a maximum for films deposited at 150oC. The average transmittance of both un-doped and Zn2+ doped SnO thin films at 350nm is above 90% regardless of the film thickness. The dye doped samples showed an improvement in optical transmission at 625nm. The reflectance spectra of all films exhibited a similar trend. Peak reflectance was observed at 350nm for un-doped and Zn2+ doped samples of SnO thin films while peak reflectance can be observed at 625nm for dye doped samples. It is also observed that the band gaps of the dye doped samples are lower: 1.55eV- 1.83eV than those of the Zn2+ doped samples: 1.60eV – 2.20eV. This showed that the incorporation of the dye shifted the fundamental absorption edge of the un-doped SnO thin films thus providing tuning effect of the band gap for device applications. The diffractograms of SnO doped Zn are characterized by relatively low intensity for all the samples irrespective of the doping concentration compared to the un-doped SnO samples. Obviously, the doping of SnO with 1% dye extracts modified the XRD patterns of the un-doped SnO samples. Substrate temperature also affected the structural properties of SnO:dye sample depicting increase in intensity vis-à-vis crystallinity of the films with increase in substrate temperature. The results equally indicate that there was an increase in the grain sizes that resulted in a decrease in energy badgap of the samples.    
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