Y. Chen, C. Huang, W. H. Yan, G. P. He, S. X. Zhang
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Numerical Study on the Sloshing Behaviors of Dual Liquid Tanks with Gas Inflow
The finite volume method (FVM) is used to numerically investigate the sloshing behaviors of dual liquid tanks with gas inflow in this study. The sloshing process of a single liquid tank is simulated to verify the feasibility of the numerical method. Three different inlet boundary conditions are then discussed in order to obtain a reasonable gas flow rate. The sloshing process of a dual liquid tank with the gas inflow is simulated, and the effects of three different factors on the sloshing behaviors are investigated. The results indicate that the overload, flow rate, and filling ratio can affect the peak value of the impact force acting on the tank wall. The impact force is positively proportional to the overload (1G, 3G, or 5G). An increase in flow rate (50 g/s, 1000 g/s, or 5000 g/s) or a decrease in filling ratio (99.52%, 75.64%, or 63.69%) can increase the size and number of bubbles, leading to intensified sloshing behavior and increased impact force.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.